Abstract:
PROBLEM TO BE SOLVED: To provide a method for measuring an overlay of a lithography device that more efficiently uses a space on a substrate and gives quick and correct results. SOLUTION: The lithography device includes a reference diffraction grating set 14 provided in the substrate, the reference diffraction grating set includes two reference diffraction gratings having a first directional line element and one reference diffraction grating having a second directional line element. A measurement diffraction grating set 12 is provided on the reference diffraction grating set, the reference diffraction grating set is provided with three measurement diffraction gratings similar to a reference diffraction grating. Two out of the measurement diffraction gratings are reversely deviated to each reference diffraction grating in the second direction. An overlay measuring device is provided to measure the asymmetry of three diffraction gratings in the reference set and the measuring set and obtain overlays in both the first and the second directions from the measured asymmetry. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic device capable of measuring a quantitative value of an overlay and a process dependent value. SOLUTION: The lithographic device configured to transfer a pattern from a patterning device onto a substrate includes two reference diffraction gratings 14 provided in the substrate, and two measurement diffraction gratings 12 above the reference diffraction gratings. The measurement diffraction gratings are similar to the reference diffraction gratings and oppositely biased in a single direction relative to the respective reference diffraction gratings. An overlay measurement device having an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement diffraction gratings. Asymmetry of each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement diffraction gratings, an overlay value 22 and a process dependent value are determined, as well as the quality indicators of the overlay value and the process dependent value. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a compound alignment overlay target given on the substrate so as to enable the measurement of the alignment of a substrate to surroundings and the measurement of the relative alignment of a series of layers on the substrate. SOLUTION: The target is provided with an array of a structure at substantially equal intervals except a part of a structure which is an offset with the same size to a first direction and a second part of a structure which is an offset with the same size to the opposite direction. The target on the substrate can be used for the measurement of the alignment, and the same target, which is given to the second layer superimposed on the first layer, can be used for the measurement of the overlay. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce the time taken for measurement of both p- and s-polarized beams. SOLUTION: Simultaneous measurement of two orthogonally polarized beams after subjection to diffraction from a substrate W to determine the characteristics of the substrate W. Linearly polarized light sources P, S having their radiation polarized in orthogonal directions are passed via two non-polarizing beam splitters, with one being rotated by 90°, with respect to the other. The combined beam is then diffracted at the substrate and then passed back through a non-polarizing beam splitter, and passed through a phase shifter and a Wollaston prism and then measured by a CCD camera. Thus, the phase and the intensities for various phase steps of the two polarized beams can be measured, and then the polarization state of the beams can be determined. If the phase shifter is changed to zero (i.e. there is no phase shift), the diffraction grating of the substrate has its parameters measured with TE and TM polarized light, simultaneously as with the same detector system. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a simple, alternative method decreasing an influence due to the asymmetric diversity of a sensor. SOLUTION: A test system projects multiple radiation beams with different wavelengths and/or polarized radiations onto two targets. A first radiation beam is projected onto a first target to detect a reflected radiation A 1+ . The first target contains two diffraction gratings each of which has a bias of +d for the other. The first radiation beam is also projected onto a second target which contains two diffraction gratings each of which has a bias of -d for the other to detect a reflected radiation A 1- . A second radiation beam with a wavelength and/or a polarized radiation different from those of the first radiation beam is projected onto the first target to detect a reflected radiation A 2+ . The second radiation beam is also projected on the second target to detect a reflected radiation A 2- . The detected radiations A 1+ , A 1- , A 2+ and A 2- are used to determine an overlay error. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an overlay system capable of recognizing overlay error, being larger than the pitch of an overlay marker lattice, relating to alignment of a projection exposure. SOLUTION: The overlay target on a substrate comprises two pairs of lattices. A first pair has a pitch P1, and a second pair has a pitch P2, with each pair containing a lattice oriented almost vertical to the first lattice. When a resist layer is aligned with a layer below it, the same overlay mark is provided on the upper layer. The relative positions of the overlay targets on the upper and lower layers are compared each other by measuring diffraction spectrum after overlay beam is radiated on the overlay targets. By providing two pairs of overlay targets having different pitches in each lattice, such overlay error which is larger than either one pitch in the overlay lattice can be measured. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To allow overlay measurement, asymmetry measurement, and re-construction of an in-die overlay target.SOLUTION: A quartered wedge optical device (QW) separately re-induces diffraction orders of the radiation scattered from a substrate, and separates the diffraction order from the illumination along each of a first direction and a second direction. For example, a zero-order (0, 0') and a first-order (-1, +1') are separated for each incidence direction. After capturing with a multi-mode fiber (MF), spectrometers (S1-S4) are used to measure intensity of diffraction order having been pre-induced spatially as a function of wavelengths (I(λ), I(λ), I(λ), and I(λ)). These are used for re-construction of an asymmetry parameter of a single lattice or calculation of an overlay error.
Abstract:
PROBLEM TO BE SOLVED: To provide an improved alignment system capable of detecting the marker which has received process fluctuation, by allowing use of smaller alignment marker or radiation of different wavelength. SOLUTION: An alignment sensor comprises a spatial coherent radiation source which supplies radiation beam to an angle-resolved skiatrometer. The surface of pupil specifies an angle of incidence of the position of radial direction of radiation at a substrate while an angular position specifies the azimuth angle of radiation. A detector is preferable to be a two-dimensional detector so as to be capable of measuring the two-dimensional angular dispersion spectrum of a substrate target. Alignment is carried out by detecting beats in the dispersion spectrum during scanning the substrate with respect to the skiatrometer. COPYRIGHT: (C)2009,JPO&INPIT