Lithography device using overlay measurement and method for manufacturing the same
    1.
    发明专利
    Lithography device using overlay measurement and method for manufacturing the same 有权
    使用覆盖测量的平面图设备及其制造方法

    公开(公告)号:JP2007266601A

    公开(公告)日:2007-10-11

    申请号:JP2007071757

    申请日:2007-03-20

    CPC classification number: G03B27/42 G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide a method for measuring an overlay of a lithography device that more efficiently uses a space on a substrate and gives quick and correct results. SOLUTION: The lithography device includes a reference diffraction grating set 14 provided in the substrate, the reference diffraction grating set includes two reference diffraction gratings having a first directional line element and one reference diffraction grating having a second directional line element. A measurement diffraction grating set 12 is provided on the reference diffraction grating set, the reference diffraction grating set is provided with three measurement diffraction gratings similar to a reference diffraction grating. Two out of the measurement diffraction gratings are reversely deviated to each reference diffraction grating in the second direction. An overlay measuring device is provided to measure the asymmetry of three diffraction gratings in the reference set and the measuring set and obtain overlays in both the first and the second directions from the measured asymmetry. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于测量更有效地使用基板上的空间并提供快速和正确结果的光刻设备的覆盖层的方法。 解决方案:光刻设备包括设置在基板中的参考衍射光栅组14,参考衍射光栅组包括具有第一方向线元件和一个具有第二方向线元件的参考衍射光栅的两个参考衍射光栅。 在参考衍射光栅组上设置测量衍射光栅组12,参考衍射光栅组具有类似于参考衍射光栅的三个测量衍射光栅。 两个测量衍射光栅在第二个方向上反向偏离到每个参考衍射光栅。 提供覆盖测量装置以测量参考组和测量组中的三个衍射光栅的不对称性,并从测量的不对称性获得第一和第二方向上的重叠。 版权所有(C)2008,JPO&INPIT

    Lithographic device using overlay measurement quality indication, and method of manufacturing device
    2.
    发明专利
    Lithographic device using overlay measurement quality indication, and method of manufacturing device 有权
    使用覆盖质量指示的平面设备及其制造方法

    公开(公告)号:JP2007266604A

    公开(公告)日:2007-10-11

    申请号:JP2007073913

    申请日:2007-03-22

    CPC classification number: G03F7/70633 G03F7/70483

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic device capable of measuring a quantitative value of an overlay and a process dependent value. SOLUTION: The lithographic device configured to transfer a pattern from a patterning device onto a substrate includes two reference diffraction gratings 14 provided in the substrate, and two measurement diffraction gratings 12 above the reference diffraction gratings. The measurement diffraction gratings are similar to the reference diffraction gratings and oppositely biased in a single direction relative to the respective reference diffraction gratings. An overlay measurement device having an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement diffraction gratings. Asymmetry of each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement diffraction gratings, an overlay value 22 and a process dependent value are determined, as well as the quality indicators of the overlay value and the process dependent value. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够测量覆盖物的定量值和过程依赖值的光刻设备。 解决方案:被配置为将图案从图案形成装置转移到衬底上的光刻装置包括设置在衬底中的两个参考衍射光栅14和在参考衍射光栅上方的两个测量衍射光栅12。 测量衍射光栅与参考衍射光栅相似,并且相对于各个参考衍射光栅在单个方向上相对偏置。 使用具有图像传感器的覆盖测量装置来获得两个测量衍射光栅中的每一个中的测量点的像素数据。 测量测量点中每个像素的不对称性,并且根据两个测量衍射光栅中每个测量衍射光栅的相关像素中的像素不对称测量值,确定覆盖值22和过程相关值,以及覆盖层的质量指标 值和过程相关的值。 版权所有(C)2008,JPO&INPIT

    Method and equipment for characterizing angle-resolved spectral lithography
    3.
    发明专利
    Method and equipment for characterizing angle-resolved spectral lithography 有权
    用于表征角度分辨率光谱的方法和设备

    公开(公告)号:JP2008042200A

    公开(公告)日:2008-02-21

    申请号:JP2007200475

    申请日:2007-08-01

    Abstract: PROBLEM TO BE SOLVED: To provide a compound alignment overlay target given on the substrate so as to enable the measurement of the alignment of a substrate to surroundings and the measurement of the relative alignment of a series of layers on the substrate.
    SOLUTION: The target is provided with an array of a structure at substantially equal intervals except a part of a structure which is an offset with the same size to a first direction and a second part of a structure which is an offset with the same size to the opposite direction. The target on the substrate can be used for the measurement of the alignment, and the same target, which is given to the second layer superimposed on the first layer, can be used for the measurement of the overlay.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供在基板上给出的复合对准覆盖目标,以便能够测量基板与周围环境的对准以及基板上的一系列层的相对取向的测量。 解决方案:除了作为与第一方向具有相同尺寸的偏移的结构的一部分和与第一方向偏移的结构的第二部分之外,目标具有基本相等的间隔的结构的阵列, 相同大小相反的方向。 基板上的目标可以用于对准的测量,并且给予叠加在第一层上的第二层的相同目标可用于覆盖层的测量。 版权所有(C)2008,JPO&INPIT

    Method and apparatus for angular-resolved spectroscopic lithography characterization
    4.
    发明专利
    Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
    用于角度分辨光谱光刻特征的方法和装置

    公开(公告)号:JP2008042177A

    公开(公告)日:2008-02-21

    申请号:JP2007158121

    申请日:2007-06-15

    CPC classification number: G01N21/21 G01N21/956 G03F7/70616 G03F7/7085

    Abstract: PROBLEM TO BE SOLVED: To reduce the time taken for measurement of both p- and s-polarized beams. SOLUTION: Simultaneous measurement of two orthogonally polarized beams after subjection to diffraction from a substrate W to determine the characteristics of the substrate W. Linearly polarized light sources P, S having their radiation polarized in orthogonal directions are passed via two non-polarizing beam splitters, with one being rotated by 90°, with respect to the other. The combined beam is then diffracted at the substrate and then passed back through a non-polarizing beam splitter, and passed through a phase shifter and a Wollaston prism and then measured by a CCD camera. Thus, the phase and the intensities for various phase steps of the two polarized beams can be measured, and then the polarization state of the beams can be determined. If the phase shifter is changed to zero (i.e. there is no phase shift), the diffraction grating of the substrate has its parameters measured with TE and TM polarized light, simultaneously as with the same detector system. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:减少测量p和s偏振光束所需的时间。 解决方案:在从基板W投影到衍射之后同时测量两个正交偏振光束,以确定基板W的特性。具有在正交方向上偏振的其辐射的线偏振光源P,S通过两个非偏振 分束器,一个相对于另一个旋转90°。 然后将组合的光束在衬底处衍射,然后通过非偏振分束器传回,并通过移相器和Wollaston棱镜,然后通过CCD照相机测量。 因此,可以测量两个偏振光束的各相位阶段的相位和强度,然后可以确定光束的偏振状态。 如果移相器被改变为零(即没有相移),则基板的衍射光栅具有与TE和TM偏振光一起测量的参数,同样地,与相同的检测器系统一样。 版权所有(C)2008,JPO&INPIT

    Method and device for angle-resolved spectroscopic lithography characterization
    5.
    发明专利
    Method and device for angle-resolved spectroscopic lithography characterization 有权
    用于角度分辨光谱光刻特征的方法和装置

    公开(公告)号:JP2008047900A

    公开(公告)日:2008-02-28

    申请号:JP2007206106

    申请日:2007-08-08

    CPC classification number: G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide a simple, alternative method decreasing an influence due to the asymmetric diversity of a sensor.
    SOLUTION: A test system projects multiple radiation beams with different wavelengths and/or polarized radiations onto two targets. A first radiation beam is projected onto a first target to detect a reflected radiation A
    1+ . The first target contains two diffraction gratings each of which has a bias of +d for the other. The first radiation beam is also projected onto a second target which contains two diffraction gratings each of which has a bias of -d for the other to detect a reflected radiation A
    1- . A second radiation beam with a wavelength and/or a polarized radiation different from those of the first radiation beam is projected onto the first target to detect a reflected radiation A
    2+ . The second radiation beam is also projected on the second target to detect a reflected radiation A
    2- . The detected radiations A
    1+ , A
    1- , A
    2+ and A
    2- are used to determine an overlay error.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种简单的替代方法,减少由于传感器的不对称多样性引起的影响。

    解决方案:测试系统将具有不同波长和/或极化辐射的多个辐射束投射到两个目标上。 将第一辐射束投影到第一靶上以检测反射辐射A 1 SB 1 + 。 第一个靶包含两个衍射光栅,每个衍射光栅的另一个具有+ d的偏置。 第一辐射束也被投射到包含两个衍射光栅的第二靶上,每个衍射光栅都具有-d的偏置,另一个具有用于另一个的偏转,以检测反射的辐射A 1。 将具有与第一辐射束不同的波长和/或偏振辐射的第二辐射束投影到第一靶上以检测反射辐射A SB 2 + 。 第二辐射束也投射在第二靶上以检测反射辐射A 2 SB。 使用检测到的辐射A 1 + ,A 1 - ,A 2 + 和A 2 - 重叠错误。 版权所有(C)2008,JPO&INPIT

    Method and device of analyzing characteristics of spectroscopy lithography which is angle-resolved
    6.
    发明专利
    Method and device of analyzing characteristics of spectroscopy lithography which is angle-resolved 有权
    角度分辨光谱法的分析特征的方法和装置

    公开(公告)号:JP2008021984A

    公开(公告)日:2008-01-31

    申请号:JP2007156383

    申请日:2007-06-13

    CPC classification number: G03F9/7076 G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide an overlay system capable of recognizing overlay error, being larger than the pitch of an overlay marker lattice, relating to alignment of a projection exposure.
    SOLUTION: The overlay target on a substrate comprises two pairs of lattices. A first pair has a pitch P1, and a second pair has a pitch P2, with each pair containing a lattice oriented almost vertical to the first lattice. When a resist layer is aligned with a layer below it, the same overlay mark is provided on the upper layer. The relative positions of the overlay targets on the upper and lower layers are compared each other by measuring diffraction spectrum after overlay beam is radiated on the overlay targets. By providing two pairs of overlay targets having different pitches in each lattice, such overlay error which is larger than either one pitch in the overlay lattice can be measured.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种覆盖系统,其能够识别与投影曝光的对准有关的重叠标记格子的间距大于重叠误差的重叠误差。 解决方案:衬底上的覆盖目标包括两对晶格。 第一对具有间距P1,第二对具有间距P2,每对包含几何垂直于第一格子的晶格。 当抗蚀剂层与其下面的层对准时,在上层上提供相同的覆盖标记。 通过在覆盖光束在覆盖目标上辐射之后测量衍射光谱,将覆盖目标在上层和下层上的相对位置进行比较。 通过在每个格子中提供具有不同间距的两对覆盖目标,可以测量大于覆盖网格中的任一个间距的覆盖误差。 版权所有(C)2008,JPO&INPIT

    計測装置及び基板ステージ・ハンドラ・システム

    公开(公告)号:JP2019020729A

    公开(公告)日:2019-02-07

    申请号:JP2018133192

    申请日:2018-07-13

    Abstract: 【課題】計測装置のスループット性能及び/又は経済性を改善する。【解決手段】本計測装置は、第1の測定装置と、第2の測定装置と、第1の基板及び/又は第2の基板を保持するように構成された第1の基板ステージと、第1の基板及び/又は第2の基板を保持するように構成された第2の基板ステージと、第1の基板及び/又は第2の基板をハンドリングするように構成された第1の基板ハンドラと、第1の基板及び/又は第2の基板をハンドリングするように構成された第2の基板ハンドラと、を備え、第1の基板は、第1、第2又は第3のFOUPからロードされ、第2の基板は、第1、第2又は第3のFOUPからロードされ、第1の測定装置は、アライメント測定装置であり、第2の測定装置は、レベルセンサ、膜厚測定装置又は分光反射率測定装置である。【選択図】図4

    Inspection apparatus and method, lithographic apparatus, lithographic processing cell, and device manufacturing method
    8.
    发明专利
    Inspection apparatus and method, lithographic apparatus, lithographic processing cell, and device manufacturing method 有权
    检查装置和方法,光刻装置,光刻处理单元和装置制造方法

    公开(公告)号:JP2012169617A

    公开(公告)日:2012-09-06

    申请号:JP2012022628

    申请日:2012-02-06

    Abstract: PROBLEM TO BE SOLVED: To allow overlay measurement, asymmetry measurement, and re-construction of an in-die overlay target.SOLUTION: A quartered wedge optical device (QW) separately re-induces diffraction orders of the radiation scattered from a substrate, and separates the diffraction order from the illumination along each of a first direction and a second direction. For example, a zero-order (0, 0') and a first-order (-1, +1') are separated for each incidence direction. After capturing with a multi-mode fiber (MF), spectrometers (S1-S4) are used to measure intensity of diffraction order having been pre-induced spatially as a function of wavelengths (I(λ), I(λ), I(λ), and I(λ)). These are used for re-construction of an asymmetry parameter of a single lattice or calculation of an overlay error.

    Abstract translation: 要解决的问题:允许叠加测量,不对称测量和重新构建模内覆盖目标。 解决方案:四分之一的楔形光学器件(QW)分别再次诱导从衬底散射的辐射的衍射级,并且沿着第一方向和第二方向沿着照射分离衍射级。 例如,针对每个入射方向分离零级(0,0')和一阶(-1,+ 1')。 在使用多模光纤(MF)捕获之后,使用光谱仪(S1-S4)来测量在空间上预诱导的衍射级的强度,作为波长的函数(I 0“ (λ),I 0 (λ),I + 1'(λ) = “POST”> - 1 (λ))。 这些用于重构单个格子的不对称参数或重叠误差的计算。 版权所有(C)2012,JPO&INPIT

    Method and device for alignment, lithography device, measuring device and manufacturing method of device
    9.
    发明专利
    Method and device for alignment, lithography device, measuring device and manufacturing method of device 审中-公开
    对准方法和装置,光刻装置,测量装置和装置的制造方法

    公开(公告)号:JP2009094512A

    公开(公告)日:2009-04-30

    申请号:JP2008259704

    申请日:2008-10-06

    CPC classification number: G03F9/7049 G03F9/7015 G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide an improved alignment system capable of detecting the marker which has received process fluctuation, by allowing use of smaller alignment marker or radiation of different wavelength. SOLUTION: An alignment sensor comprises a spatial coherent radiation source which supplies radiation beam to an angle-resolved skiatrometer. The surface of pupil specifies an angle of incidence of the position of radial direction of radiation at a substrate while an angular position specifies the azimuth angle of radiation. A detector is preferable to be a two-dimensional detector so as to be capable of measuring the two-dimensional angular dispersion spectrum of a substrate target. Alignment is carried out by detecting beats in the dispersion spectrum during scanning the substrate with respect to the skiatrometer. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:通过允许使用较小的对准标记或不同波长的辐射,提供能够检测已经接收到过程波动的标记的改进的对准系统。 解决方案:对准传感器包括空间相干辐射源,其将辐射束提供给角度分辨的测角仪。 瞳孔表面指定基板处的辐射径向位置的入射角,而角位置指定辐射的方位角。 检测器优选为二维检测器,以便能够测量基板靶的二维角分散光谱。 通过在扫描基板期间相对于滑雪测定仪检测分散光谱中的拍子来进行对准。 版权所有(C)2009,JPO&INPIT

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