公开(公告)号：WO2020114686A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079691

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20

Abstract: Described is a method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method comprising: obtaining a trained first model which translates modeled parameters into a yield parameter, said modeled parameters comprising: a) geometrical parameters associated with one or more of: a geometric characteristic, dimension or position of a device element manufactured by the process and b) trained free parameters; obtaining process parameter data comprising process parameters characterizing the process; converting the process parameter data into values of the geometrical parameters; and predicting the yield parameter using the trained first model and the values of the geometrical parameters.

公开(公告)号：EP3891558A1

公开(公告)日：2021-10-13

申请号：EP19798219.2

申请日：2019-10-30

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20