公开(公告)号：WO2020114692A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/080129

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime, Philippe, Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

Abstract: Described is a method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method comprising; obtaining yield distribution data comprising the distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set comprising a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：WO2021028126A1

公开(公告)日：2021-02-18

申请号：PCT/EP2020/069355

申请日：2020-07-09

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  CHENG, Yana ,  LIN, Chenxi ,  ZOU, Yi ,  HARUTYUNYAN, Davit ,  SCHMITT-WEAVER, Emil, Peter ,  BHATTACHARYYA, Kaustuve ,  LAMBREGTS, Cornelis, Johannes, Henricus ,  YAGUBIZADE, Hadi

IPC: G03F7/20 ,  H01L21/66

Abstract: Described herein is a method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set comprising overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts the overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprises a difference between the predicted data and the de-corrected measured overlay data.

公开(公告)号：WO2020114686A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079691

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20

Abstract: Described is a method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method comprising: obtaining a trained first model which translates modeled parameters into a yield parameter, said modeled parameters comprising: a) geometrical parameters associated with one or more of: a geometric characteristic, dimension or position of a device element manufactured by the process and b) trained free parameters; obtaining process parameter data comprising process parameters characterizing the process; converting the process parameter data into values of the geometrical parameters; and predicting the yield parameter using the trained first model and the values of the geometrical parameters.

公开(公告)号：WO2020114684A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079640

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SLACHTER, Abraham ,  TEL, Wim, Tjibbo ,  SLOTBOOM, Daan, Maurits ,  TIMOSHKOV, Vadim, Yourievich ,  VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus ,  MENCHTCHIKOV, Boris ,  HASTINGS, Simon, Philip, Spencer ,  TABERY, Cyrus, Emil ,  GENIN, Maxime, Philippe, Frederic ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: A method for analyzing a process, the method including: obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：WO2020212057A1

公开(公告)日：2020-10-22

申请号：PCT/EP2020/057401

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： WERKMAN, Roy ,  DECKERS, David, Frans, Simon ,  HASTINGS, Simon, Philip, Spencer ,  ZIEBARTH, Jeffrey, Thomas ,  REHMAN, Samee, Ur ,  HARUTYUNYAN, Davit ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: There is provided a method for determining a correction for an apparatus used in a process of patterning substrates, the method comprising: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model comprising at least a group-specific correction component and a common correction component.

公开(公告)号：WO2020126242A1

公开(公告)日：2020-06-25

申请号：PCT/EP2019/081282

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： BRANTJES, Nicolaas Petrus Marcus ,  COX, Matthijs ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime, Philippe, Frederic

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method comprising: obtaining a first set of pre-process metrology data; processing the first set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed first set of pre-process metrology data to determine the correction for said semiconductor manufacturing process.

公开(公告)号：EP3899662A1

公开(公告)日：2021-10-27

申请号：EP19801044.9

申请日：2019-11-14

Applicant: ASML Netherlands B.V.

Inventor： BRANTJES, Nicolaas Petrus Marcus ,  COX, Matthijs ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime, Philippe, Frederic

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：EP3891559A1

公开(公告)日：2021-10-13

申请号：EP19798274.7

申请日：2019-11-04

Applicant: ASML Netherlands B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus Emil ,  CEKLI, Hakki Ergun ,  HASTINGS, Simon Philip Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime Philippe Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

公开(公告)号：EP3891558A1

公开(公告)日：2021-10-13

申请号：EP19798219.2

申请日：2019-10-30

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20