公开(公告)号：WO2020114692A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/080129

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime, Philippe, Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

Abstract: Described is a method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method comprising; obtaining yield distribution data comprising the distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set comprising a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：WO2022128694A1

公开(公告)日：2022-06-23

申请号：PCT/EP2021/084841

申请日：2021-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： MOIN, Nabeel, Noor ,  LIN, Chenxi ,  ZOU, Yi

IPC: G03F7/20 ,  G06N20/00 ,  G06N20/20

Abstract: A method and apparatus for training a defect location prediction model to predict a defect for a substrate location is disclosed. A number of datasets having data regarding process-related parameters for each location on a set of substrates is received. Some of the locations have partial datasets in which data regarding one or more process-related parameters is absent. The datasets are processed to generate multiple parameter groups having data for different sets of process-related parameters. For each parameter group, a sub-model of the defect location prediction model is created based on the corresponding set of process-related parameters and trained using data from the parameter group. A trained sub-model(s) may be selected based on process-related parameters available in a candidate dataset and a defect prediction may be generated for a location associated with the candidate dataset using the selected sub-model.

公开(公告)号：WO2018202361A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/058096

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  TABERY, Cyrus, Emil ,  VAN GORP, Simon, Hendrik, Celine ,  LIN, Chenxi ,  SONNTAG, Dag ,  CEKLI, Hakki, Ergun ,  ALVAREZ SANCHEZ, Ruben ,  LIU, Shih-Chin ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  DE RUITER, Christiaan, Theodoor ,  TEN BERGE, Peter ,  LERCEL, Michael, James ,  DUAN, Wei ,  GUITTET, Pierre-Yves, Jerome, Yvan

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including measured electrical characteristics from previously processed substrates and process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：WO2021028126A1

公开(公告)日：2021-02-18

申请号：PCT/EP2020/069355

申请日：2020-07-09

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  CHENG, Yana ,  LIN, Chenxi ,  ZOU, Yi ,  HARUTYUNYAN, Davit ,  SCHMITT-WEAVER, Emil, Peter ,  BHATTACHARYYA, Kaustuve ,  LAMBREGTS, Cornelis, Johannes, Henricus ,  YAGUBIZADE, Hadi

IPC: G03F7/20 ,  H01L21/66

Abstract: Described herein is a method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set comprising overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts the overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprises a difference between the predicted data and the de-corrected measured overlay data.

公开(公告)号：WO2020114686A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079691

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20

Abstract: Described is a method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method comprising: obtaining a trained first model which translates modeled parameters into a yield parameter, said modeled parameters comprising: a) geometrical parameters associated with one or more of: a geometric characteristic, dimension or position of a device element manufactured by the process and b) trained free parameters; obtaining process parameter data comprising process parameters characterizing the process; converting the process parameter data into values of the geometrical parameters; and predicting the yield parameter using the trained first model and the values of the geometrical parameters.

公开(公告)号：WO2020114684A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079640

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SLACHTER, Abraham ,  TEL, Wim, Tjibbo ,  SLOTBOOM, Daan, Maurits ,  TIMOSHKOV, Vadim, Yourievich ,  VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus ,  MENCHTCHIKOV, Boris ,  HASTINGS, Simon, Philip, Spencer ,  TABERY, Cyrus, Emil ,  GENIN, Maxime, Philippe, Frederic ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: A method for analyzing a process, the method including: obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：WO2018215188A1

公开(公告)日：2018-11-29

申请号：PCT/EP2018/061488

申请日：2018-05-04

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  ZOU, Yi ,  LIN, Chenxi ,  CAO, Yu ,  LU, Yen-Wen ,  CHEN, Been-Der ,  ZHANG, Quan ,  BARON, Stanislas, Hugo, Louis ,  LUO, Ya

IPC: G03F1/70 ,  G03F1/36 ,  G03F7/20

Abstract: A method including: obtaining a portion (505) of a design layout; determining (520) characteristics (530) of assist features based on the portion or characteristics (510) of the portion; and training (550) a machine learning model using training data (540) comprising a sample whose feature vector comprises the characteristics (510) of the portion and whose label comprises the characteristics (530) of the assist features. The machine learning model may be used to determine (560) characteristics of assist features of any portion of a design layout, even if that portion is not part of the training data.

公开(公告)号：WO2022101051A1

公开(公告)日：2022-05-19

申请号：PCT/EP2021/080304

申请日：2021-11-02

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  ZOU, Yi ,  HASAN, Tanbir ,  XU, Huina ,  KOU, Ren-Jay ,  MOIN, Nabeel, Noor ,  NAFISI, Kourosh

IPC: G03F7/20

Abstract: A method and apparatus for identifying locations to be inspected on a substrate is disclosed. A defect location prediction model is trained using a training dataset associated with other substrates to generate a prediction of defect or non-defect and a confidence score associated with the prediction for each of the locations based on process-related data associated with the substrates. Those of the locations determined by the defect location prediction model as having confidences scores satisfying a confidence threshold are added to a set of locations to be inspected by an inspection system. After the set of locations are inspected, the inspection results data is obtained, and the defect location prediction model is incrementally trained by using the inspection results data and process-related data for the set of locations as training data.

公开(公告)号：WO2020212057A1

公开(公告)日：2020-10-22

申请号：PCT/EP2020/057401

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： WERKMAN, Roy ,  DECKERS, David, Frans, Simon ,  HASTINGS, Simon, Philip, Spencer ,  ZIEBARTH, Jeffrey, Thomas ,  REHMAN, Samee, Ur ,  HARUTYUNYAN, Davit ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: There is provided a method for determining a correction for an apparatus used in a process of patterning substrates, the method comprising: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model comprising at least a group-specific correction component and a common correction component.

公开(公告)号：WO2020126242A1

公开(公告)日：2020-06-25

申请号：PCT/EP2019/081282

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： BRANTJES, Nicolaas Petrus Marcus ,  COX, Matthijs ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime, Philippe, Frederic

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method comprising: obtaining a first set of pre-process metrology data; processing the first set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed first set of pre-process metrology data to determine the correction for said semiconductor manufacturing process.