公开(公告)号：AU2002346599A1

公开(公告)日：2003-06-17

申请号：AU2002346599

申请日：2002-12-02

Applicant: AXCELIS TECH INC

Inventor： STEWART KEVIN ,  JANOS ALAN ,  BERRY IVAN ,  SINNOTT ANTHONY

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247

公开(公告)号：AU2002332421A1

公开(公告)日：2003-02-17

申请号：AU2002332421

申请日：2002-07-22

Applicant: AXCELIS TECH INC

Inventor： SAKTHIVEL PALANI ,  BERRY IVAN ,  WALDFRIED CARLO ,  HAN QINGYUAN

IPC: G03F7/42 ,  H01J37/32 ,  H01L21/311 ,  H01L21/00 ,  H01L21/3213

公开(公告)号：WO2006055346A3

公开(公告)日：2007-03-22

申请号：PCT/US2005040463

申请日：2005-11-08

Applicant: AXCELIS TECH INC ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

IPC: H01L21/316 ,  H01L21/3105

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Abstract translation: 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：WO2010059252A2

公开(公告)日：2010-05-27

申请号：PCT/US2009006270

申请日：2009-11-20

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

Abstract: Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的线（FEOL）等离子体介导灰化工艺的前端通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体的比例 活性氮和活性氧大于由包含氧气和氮气的气体混合物的等离子体得到的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：WO2012018375A2

公开(公告)日：2012-02-09

申请号：PCT/US2011001325

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Abstract translation: 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

公开(公告)号：SG187227A1

公开(公告)日：2013-02-28

申请号：SG2013006655

申请日：2011-07-27

Applicant: AXCELIS TECH INC

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

公开(公告)号：WO2004049073A3

公开(公告)日：2004-11-18

申请号：PCT/US0338019

申请日：2003-11-26

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  HAN QINGYUAN ,  HALLOCK JOHN ,  BERRY IVAN ,  MARGOLIS ARI ,  ESCORCIA ORLANDO

IPC: G03F7/42 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。

公开(公告)号：WO03049182A3

公开(公告)日：2003-09-12

申请号：PCT/US0238310

申请日：2002-12-02

Applicant: AXCELIS TECH INC

Inventor： JANOS ALAN ,  BERRY IVAN ,  SINNOTT ANTHONY ,  STEWART KEVIN

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247

CPC classification number: H01L29/66825 ,  H01L21/268 ,  H01L21/28176

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract translation: 用于光学减少集成电路中电荷积聚的过程包括将集成电路或其部分暴露于宽带辐射源。 该过程有效地减少了集成电路制造中出现的电荷累积。

公开(公告)号：WO03010799A2

公开(公告)日：2003-02-06

申请号：PCT/US0223344

申请日：2002-07-22

Applicant: AXCELIS TECH INC

Inventor： HAN QINGYUAN ,  BERRY IVAN ,  SAKTHIVEL PALANI ,  WALDFRIED CARLO

IPC: G03F7/42 ,  H01J37/32 ,  H01L21/311 ,  H01L21/00

CPC classification number: H01J37/32357 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

Abstract: A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and /or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.

Abstract translation: 用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原离子密度等离子体，以从表面选择性地去除光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原 离子密度等离子体。