公开(公告)号：KR20080058288A

公开(公告)日：2008-06-25

申请号：KR20077000392

申请日：2007-01-06

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: H01L21/3105 ,  H01L21/312

CPC classification number: H01L21/76825 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/324

Abstract: A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications comprises coating a suitable dielectric material onto a substrate; and exposing the dielectric material to ultraviolet radiation in an amount effective to reduce an organic content and/or increase a density and/or increase a wet etch resistance of the dielectric material. Optionally, the UV cured dielectric material may be exposed to multiple ultraviolet radiation patterns.

Abstract translation: 用于预金属和浅沟槽隔离应用中的电介质材料的UV固化方法包括将合适的介电材料涂覆到基底上; 以及以有效减少有机含量和/或增加密度和/或增加介电材料的耐湿蚀刻性的量将介电材料暴露于紫外线辐射。 任选地，UV固化的介电材料可以暴露于多种紫外线辐射图案。

公开(公告)号：SG187227A1

公开(公告)日：2013-02-28

申请号：SG2013006655

申请日：2011-07-27

Applicant: AXCELIS TECH INC

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

公开(公告)号：WO2006055346A3

公开(公告)日：2007-03-22

申请号：PCT/US2005040463

申请日：2005-11-08

Applicant: AXCELIS TECH INC ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BERRY IVAN

IPC: H01L21/316 ,  H01L21/3105

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Abstract translation: 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：WO2012018374A3

公开(公告)日：2012-04-26

申请号：PCT/US2011001324

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的等离子体介导的灰化过程通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧 大于从包含氧气和氮气的气体混合物的等离子体可获得的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：WO2010059252A2

公开(公告)日：2010-05-27

申请号：PCT/US2009006270

申请日：2009-11-20

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

Abstract: Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的线（FEOL）等离子体介导灰化工艺的前端通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体的比例 活性氮和活性氧大于由包含氧气和氮气的气体混合物的等离子体得到的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：WO2005017983A3

公开(公告)日：2005-09-15

申请号：PCT/US2004025962

申请日：2004-08-11

Applicant: AXCELIS TECH INC ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  HAN QINGYUAN ,  BUCKLEY THOMAS ,  SAKTHIVEL PALANIKUMARAN

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  HAN QINGYUAN ,  BUCKLEY THOMAS ,  SAKTHIVEL PALANIKUMARAN

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306

CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.

Abstract translation: 用于在半导体衬底存在低k材料的情况下去除光致抗蚀剂的基本上无氧且无氮的等离子体灰化工艺包括通过将等离子体气体组合物暴露于能源形成等离子体来形成活性物质。 等离子气体组合物基本不含含氧气体和含氮气体。 通过将光致抗蚀剂暴露于基本不含氧和氮的反应性物质，等离子体选择性地从含有低k材料的下层衬底上去除光致抗蚀剂。 该工艺可以与含低k介电材料的碳一起使用。

公开(公告)号：WO2004049073A3

公开(公告)日：2004-11-18

申请号：PCT/US0338019

申请日：2003-11-26

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  HAN QINGYUAN ,  HALLOCK JOHN ,  BERRY IVAN ,  MARGOLIS ARI ,  ESCORCIA ORLANDO

IPC: G03F7/42 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。

公开(公告)号：WO2012018375A2

公开(公告)日：2012-02-09

申请号：PCT/US2011001325

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Abstract translation: 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

公开(公告)号：WO2005010971A3

公开(公告)日：2005-04-28

申请号：PCT/US2004017838

申请日：2004-06-07

Applicant: AXCELIS TECH INC ,  WALDFRIED CARLO ,  HAN QINGYUAN ,  ESCORCIA ORLANDO ,  BERRY III IVAN L

Inventor： WALDFRIED CARLO ,  HAN QINGYUAN ,  ESCORCIA ORLANDO ,  BERRY III IVAN L

IPC: C23C16/44 ,  C09D183/02 ,  C09D183/04 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  B05D3/06 ,  C04B41/46 ,  C04B41/50 ,  C23C16/40 ,  H01L21/314 ,  H01L21/324

CPC classification number: C09D183/02 ,  C09D183/04 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695

Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50 %. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the LIV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

Abstract translation: 低介电常数材料具有改善的弹性模量和材料硬度。 制造这种材料的过程包括提供介电材料和紫外线（UV）固化材料以产生UV固化的介电材料。 UV固化产生具有改善的模量和材料硬度的材料。 改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行后UV处理。 与LIV固化的介电材料相比，后UV处理降低材料的介电常数，同时保持改进的弹性模量和材料硬度。 紫外线固化的电介质可以另外表现出比炉固化过程更低的固化总热量预算。