公开(公告)号：SG187227A1

公开(公告)日：2013-02-28

申请号：SG2013006655

申请日：2011-07-27

Applicant: AXCELIS TECH INC

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

公开(公告)号：WO2012018375A2

公开(公告)日：2012-02-09

申请号：PCT/US2011001325

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Abstract translation: 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

公开(公告)号：WO2012018374A3

公开(公告)日：2012-04-26

申请号：PCT/US2011001324

申请日：2011-07-27

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO

IPC: G03F7/42

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的等离子体介导的灰化过程通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧 大于从包含氧气和氮气的气体混合物的等离子体可获得的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：WO2010059252A2

公开(公告)日：2010-05-27

申请号：PCT/US2009006270

申请日：2009-11-20

Applicant: AXCELIS TECH INC ,  LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

Inventor： LUO SHIJIAN ,  ESCORCIA ORLANDO ,  WALDFRIED CARLO ,  BERRY IVAN

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

Abstract: Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的线（FEOL）等离子体介导灰化工艺的前端通常包括将衬底暴露于等离子体以从衬底选择性地去除光致抗蚀剂，注入的光致抗蚀剂，聚合物和/或残余物，其中等离子体的比例 活性氮和活性氧大于由包含氧气和氮气的气体混合物的等离子体得到的活性氮和活性氧的比率。 等离子体表现出高生产量，同时最小化和/或防止衬底氧化和掺杂剂漂白。 还描述了等离子体装置。