公开(公告)号：JP2001210266A

公开(公告)日：2001-08-03

申请号：JP2000361124

申请日：2000-11-28

Applicant: AXCELIS TECH INC

Inventor： MCINTYRE EDWARD K JR ,  ALLEN ERNEST E JR ,  JONES MARY A ,  NAKATSUGAWA TOMOYA

IPC: C23C14/48 ,  H01J37/00 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To offer the operating method for an ion implantation device to reduce X-ray radiation and to provide the necessary constitutional parts therefor. SOLUTION: As the constitutional parts for the ion implantation device, the electrode 72 for the RF linear accelerator 20 is filmed with a film material. This film material has an atomic mass less than that of the lower layer of electrodes and the electron colliding with the above film results in discharging less X-ray than the electron collides with the above electrode. The electrode 72 is made of aluminum and the film 114 is made of a carbon-based material, namely a film material of synthetic diamond or of materials similar to diamond. This film is of 2 to 10 micron and made by a chemical vapor deposition.