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公开(公告)号:JP2001210266A
公开(公告)日:2001-08-03
申请号:JP2000361124
申请日:2000-11-28
Applicant: AXCELIS TECH INC
Inventor: MCINTYRE EDWARD K JR , ALLEN ERNEST E JR , JONES MARY A , NAKATSUGAWA TOMOYA
IPC: C23C14/48 , H01J37/00 , H01J37/09 , H01J37/317 , H01L21/265
Abstract: PROBLEM TO BE SOLVED: To offer the operating method for an ion implantation device to reduce X-ray radiation and to provide the necessary constitutional parts therefor. SOLUTION: As the constitutional parts for the ion implantation device, the electrode 72 for the RF linear accelerator 20 is filmed with a film material. This film material has an atomic mass less than that of the lower layer of electrodes and the electron colliding with the above film results in discharging less X-ray than the electron collides with the above electrode. The electrode 72 is made of aluminum and the film 114 is made of a carbon-based material, namely a film material of synthetic diamond or of materials similar to diamond. This film is of 2 to 10 micron and made by a chemical vapor deposition.
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公开(公告)号:SG124233A1
公开(公告)日:2006-08-30
申请号:SG200006871
申请日:2000-11-28
Applicant: AXCELIS TECH INC
Inventor: MCINTYRE EDWARD KIRBY JR , ALLEN ERNEST EVERETT JR , JONES MARY ALICE , NAKATSUGAWA TOMOYA
IPC: C23C14/48 , H01J37/00 , H01J37/09 , H01J37/317 , H01L21/265
Abstract: A component of an ion implanter (10), and a method of operating same, are provided for reducing the amount of x-rays generated when an ion beam (15) passes there through. In one embodiment, the component comprises an electrode (72) in an ion implanter radio frequency (RF) linear accelerator (linac) (18) that is coated with a material coating (114) having as lesser atomic mass that that of the underlying electrode, such that electrons impacting said coating produce less x-rays than electrons impacting said electrode. The electrode (72) may be made of aluminum, and the coating (114) may be made of a carbon- based material, such as a synthetic diamond or a diamond-like coating (DLC) material. The coating (114) has a thickness of approximately two to ten (2-10) microns ([err]m), and is applied by a chemical vapor deposition (CVD) process.
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