公开(公告)号：JP2001250855A

公开(公告)日：2001-09-14

申请号：JP2000380352

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/07 ,  C23C14/50 ,  C23C16/44 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

Abstract: PROBLEM TO BE SOLVED: To provide a wafer handling system for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a wafer carrying method for it. SOLUTION: A wafer handling system 200 is provided with a load lock chamber 206 for wafers, a treatment chamber 202 for wafers, and a carrying chamber 204 that connects the load lock chamber to the treatment chamber and includes a wafer carrying mechanism. A wafer mechanism is provided with a carrying arm that is connected to one portion of the carrying chamber 204 forming one axis rotatably, and the carrying arm can be rotated around a single axis for carrying the wafers between the load lock chamber 206 and the treatment chamber by single axis operation. The method for carrying wafers includes steps for placing the wafers in the load lock chamber 206, rotating the carrying arm into the load lock chamber to take out the wafers, rotating the carrying arm out of the load lock chamber 206 into the treatment chamber, and placing the wafers in the treatment chamber 202.

公开(公告)号：JP2001210266A

公开(公告)日：2001-08-03

申请号：JP2000361124

申请日：2000-11-28

Applicant: AXCELIS TECH INC

Inventor： MCINTYRE EDWARD K JR ,  ALLEN ERNEST E JR ,  JONES MARY A ,  NAKATSUGAWA TOMOYA

IPC: C23C14/48 ,  H01J37/00 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To offer the operating method for an ion implantation device to reduce X-ray radiation and to provide the necessary constitutional parts therefor. SOLUTION: As the constitutional parts for the ion implantation device, the electrode 72 for the RF linear accelerator 20 is filmed with a film material. This film material has an atomic mass less than that of the lower layer of electrodes and the electron colliding with the above film results in discharging less X-ray than the electron collides with the above electrode. The electrode 72 is made of aluminum and the film 114 is made of a carbon-based material, namely a film material of synthetic diamond or of materials similar to diamond. This film is of 2 to 10 micron and made by a chemical vapor deposition.

公开(公告)号：JP2001250856A

公开(公告)日：2001-09-14

申请号：JP2000380353

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/00 ,  C23C14/48 ,  F16K3/314 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treating device for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a method for accessing the wafer treating device. SOLUTION: A wafer treating device 200 is provided with a treatment chamber 202 having upper and lower parts, and an annular ring valve 210 that is engaged to one of both the parts. The ring valve 210 can be operated to perform treatment by closing the treatment chamber 202 at a first position, and to perform access by releasing the treatment chamber 202 at a second position. The ring valve at the first position forms a uniform surface at the inner periphery part of the closed treatment chamber, thus making uniform the treatment state in the treatment chamber. The access method for that purpose includes a step for closing an access port in the treatment chamber for moving the ring valve 202 in the treatment chamber from the first position that cannot be accessed to the second position for opening the access port.