4.
    发明专利
    未知

    公开(公告)号:ES2054970T3

    公开(公告)日:1994-08-16

    申请号:ES89117607

    申请日:1989-09-23

    Applicant: BASF AG

    Abstract: The invention relates to radiation-sensitive mixtures of certain precursors and carbonyl compounds which contain aromatic radicals and, in the UV-excited state, are capable of hydrogen abstraction, which mixtures experience a solubility differentiation on irradiation with actinic light and are suitable for the preparation of polyimides, polyisoindoloquinazolinediones, polyoxazinediones, polyquinazolinediones or polyquinazolones. They are suitable for the production of insulating layers and printed circuit boards.

    7.
    发明专利
    未知

    公开(公告)号:DE3781603D1

    公开(公告)日:1992-10-15

    申请号:DE3781603

    申请日:1987-06-19

    Applicant: BASF AG

    Abstract: Photopolymerisable copying materials contain photopolymerisable olefinically unsatd. organic cpd(s). (I), opt. a polymeric binder (II), photopolymerisation initiator(s) (III), a colour-forming system (IV), which increases the colour intensity of the material on exposure to actinic light, a sensitiser (V) and opt. other additives. (IV) consists of a (practically) colourless organic cpd. (IVA), which can be oxidised to a coloured cpd., and a photo-oxidant (IVB) for (IVA). The novelty is that (IVB) is an acylphosphine oxide or acylphosphine sulphide cpd. with a max. long-wave absorption band below 500 nm. (IVB) can be prepd. by conventional methods.

    8.
    发明专利
    未知

    公开(公告)号:DE3833438A1

    公开(公告)日:1990-04-05

    申请号:DE3833438

    申请日:1988-10-01

    Applicant: BASF AG

    Abstract: The invention relates to radiation-reactive mixtures of certain precursors and carbonyl compounds which contain aromatic radicals and, in the UV-excited state, are capable of hydrogen abstraction, which mixtures experience a solubility differentiation on irradiation with actinic light and are suitable for the preparation of polyimides, polyisoindoloquinazolinediones, polyoxazinediones, polyquinazolinediones or polyquinazolones. … They are suitable for the production of insulating layers and printed circuit boards.

    9.
    发明专利
    未知

    公开(公告)号:DE3340154A1

    公开(公告)日:1985-05-15

    申请号:DE3340154

    申请日:1983-11-07

    Applicant: BASF AG

    Abstract: In the production of imagewise structured resist layers, for example for the manufacture of printed circuits, electronic components, soldering masks, etc., by application, onto a substrate, of a positive-working resist layer (R) which can be rendered soluble by exposure to actinic light, imagewise exposure of the resist layer (R) to actinic light and removal of the exposed parts of the layer by washing out with a developer, the photosensitive resist layer (R) used, in particular in the form of a dry film resist, consists of two or more strata (S) which posses different basic solubilities, at least the upper stratum (U) being photosensitive and the lower stratum (LS) having a higher basic solubility in the developer than has the upper stratum (U).

    10.
    发明专利
    未知

    公开(公告)号:ES2059877T3

    公开(公告)日:1994-11-16

    申请号:ES90109443

    申请日:1990-05-18

    Applicant: BASF AG

    Abstract: The present invention relates to hot-melt adhesive coating solutions which contain… A) from 5 to 80% by weight of a copolyamide built up from units derived from… A1) organic dicarboxylic acids … … where R is an aliphatic radical having from 1 to 20 carbon atoms or an aromatic radical having from 5 to 25 carbon atoms,… and… A2) a mixture of diisocyanates comprising… a21) from 20 to 95 mol% of a diisocyanate of the formula… OCN-R -NCO… where R is an aromatic radical having 5 to 25 carbon atoms,… a22) from 5 to 70 mol% of a diisocyanate of the formula… OCN-R -NCO… where R is … … or a linear aliphatic radical having 3 to 30 carbon atoms which is substituted by 1 to 3 C1-C4-alkyl groups, and R and R , independently of one another, are each a C1-C4-alkyl group or a hydrogen atom,… a23) from 0 to 20 mol% of a diisocyanate of the formula… OCN-(CH2)y-NCO… where y is an integer in the range from 1 to 20,… and… B) from

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