公开(公告)号：SG11201900607WA

公开(公告)日：2019-03-28

申请号：SG11201900607W

申请日：2017-08-23

Applicant: BASF SE

Inventor： ADERMANN TORBEN ,  ABELS FALKO ,  LIMBURG CAROLIN ,  WILMER HAGEN ,  GERKENS JAN ,  SCHNEIDER SVEN

IPC: C07F15/00 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

公开(公告)号：SG11201803553UA

公开(公告)日：2018-06-28

申请号：SG11201803553U

申请日：2016-11-30

Applicant: BASF SE

Inventor： ADERMANN TORBEN ,  LOEFFLER DANIEL ,  WILMER HAGEN ,  SCHIERLE-ARNDT KERSTIN ,  GERKENS JAN ,  VOLKMANN CHRISTIAN ,  SCHNEIDER SVEN

IPC: C23C16/18 ,  C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.