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    PROCESS FOR THE ETCHING METAL- OR SEMIMETAL-CONTAINING MATERIALS
    3.
    发明专利
    PROCESS FOR THE ETCHING METAL- OR SEMIMETAL-CONTAINING MATERIALS 未知

    公开(公告)号：SG11201908113WA

    公开(公告)日：2019-10-30

    申请号：SG11201908113W

    申请日：2018-04-09

    Applicant: BASF SE

    Inventor： ADERMANN TORBEN ,  ABELS FALKO ,  ZUEND STEPHAN ,  WILMER HAGEN

    IPC: C23F1/12 ,  H01L21/3213

    Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 18 October 2018 (18.10.2018) W I PO I PCT o I iolo MIME EEO 011 (10) International Publication Number WO 2018/189067 Al (51) International Patent Classification: C23F 1/12 (2006.01) HO1L 21/3213 (2006.01) (21) International Application Number: Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.1700) PCT/EP2018/058961 Published: (22) International Filing Date: with international search report (Art. 21(3)) 09 April 2018 (09.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 17166419.6 13 April 2017 (13.04.2017) EP (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, 67056 Ludwigshafen am Rhein (DE). (72) Inventors: ADERMANN, Torben; Carl-Bosch-Strasse 38, 67056 Ludwigshafen (DE). ABELS, Falko; Carl- Bosch-Strasse 38, 67056 Ludwigshafen (DE). ZUEND, Stephan; 46820 Fremont Blvd, Fremont, California 94538 (US). WILMER, Hagen; Carl-Bosch-Strasse 38, 67056 Ludwigshafen (DE). (74) Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - 0006, 67056 Ludwigshafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). N (54) Title: PROCESS FOR THE ETCHING METAL- OR SEMIMETAL-CONTAINING MATERIALS 01 ▪ (57) : The present invention is in the field of etching metal- or semimetal-containing materials by atomic layer etching. In 1-1 particular the present invention relates to a process for etching a metal- or semimetal-containing material comprising bringing a metal- or semimetal-containing material having an activated surface in contact with an organic compound containing a leaving group which is © capable of forming a volatile compound upon coming in contact with the metal- or semi- metal-containing material and a group which N is capable of coordinating to a metal or semimetal atom in the metal- or semimetal-containing material.

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    4.
    发明专利
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 未知

    公开(公告)号：SG11201900607WA

    公开(公告)日：2019-03-28

    申请号：SG11201900607W

    申请日：2017-08-23

    Applicant: BASF SE

    Inventor： ADERMANN TORBEN ,  ABELS FALKO ,  LIMBURG CAROLIN ,  WILMER HAGEN ,  GERKENS JAN ,  SCHNEIDER SVEN

    IPC: C07F15/00 ,  C23C16/455

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

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