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公开(公告)号：SG11201803553UA
公开(公告)日：2018-06-28
申请号：SG11201803553U
申请日：2016-11-30
Applicant: BASF SE
Inventor： ADERMANN TORBEN , LOEFFLER DANIEL , WILMER HAGEN , SCHIERLE-ARNDT KERSTIN , GERKENS JAN , VOLKMANN CHRISTIAN , SCHNEIDER SVEN
IPC: C23C16/18 , C07F13/00 , C07F15/04 , C07F15/06 , C23C16/455
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.
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公开(公告)号：SG11201807865UA
公开(公告)日：2018-10-30
申请号：SG11201807865U
申请日：2017-04-10
Applicant: BASF SE
Inventor： LIMBURG CAROLIN , LOEFFLER DANIEL , WILMER HAGEN , WALTER MARC , REINERS MATTHIAS
IPC: C23C16/455 , C01G51/00 , C01G53/00 , C07F15/04 , C07F15/06
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公开(公告)号：SG11202010737UA
公开(公告)日：2020-12-30
申请号：SG11202010737U
申请日：2019-05-13
Applicant: BASF SE
Inventor： BRILL MARCEL , LOEFFLER DANIEL , BURK YENI , PIRRUNG FRANK , ENGELBRECHT LOTHAR , CSIHONY SZILARD , BERGELER MAIKE , BOYKO VOLODYMYR , WILKE PATRICK
Abstract: The invention relates to the use of a composition comprising a C1 to C6 alkanol and a carboxylic acid ester of formula (I) wherein R1 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; R2 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; X21, X22 are independently selected from C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C1 to C6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.
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Patent Agency Ranking
公开(公告)号：SG11202101938QA
公开(公告)日：2021-04-29
申请号：SG11202101938Q
申请日：2019-09-26
Applicant: BASF SE
Inventor： LINDNER JEAN-PIERRE BERKAN , CSIHONY SZILARD , LOEFFLER DANIEL , BURK YENI , GERKE BIRGIT , PIRRUNG FRANK , HENDERSON LUCAS BENJAMIN , BOYKO VOLODYMYR , DE OLIVEIRA RUI , HENNIG INGOLF , YU MIRAN
IPC: C08L63/00
Abstract: A resin composition, comprising (a) at least one epoxy resin, and (b) at least one siloxane-type curing agent of formula C22 or C31 (C22) (C31) wherein the resin composition does essentially not contain any fluoride or bromide.
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公开(公告)号：SG11201804019QA
公开(公告)日：2018-06-28
申请号：SG11201804019Q
申请日：2016-11-29
Applicant: BASF SE
Inventor： ABELS FALKO , SCHWEINFURTH DAVID , MATOS KARL , LOEFFLER DANIEL , AHLF MARAIKE , BLASBERG FLORIAN , SCHAUB THOMAS , SPIELMANN JAN , KIRSTE AXEL , GASPAR BORIS
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
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公开(公告)号：SG11201802577PA
公开(公告)日：2018-06-28
申请号：SG11201802577P
申请日：2016-11-18
Applicant: BASF SE
Inventor： ADERMANN TORBEN , LOEFFLER DANIEL , LIMBURG CAROLIN , ABELS FALKO , WILMER HAGEN , GILL MONICA , GRIFFITHS MATTHEW , BARRY SÉAN
IPC: C23C16/18 , C07F13/00 , C07F15/04 , C07F15/06 , C23C16/455
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.
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公开(公告)号：SG11201901887UA
公开(公告)日：2019-04-29
申请号：SG11201901887U
申请日：2017-10-05
Applicant: BASF SE
Inventor： SCHWEINFURTH DAVID DOMINIQUE , ABELS FALKO , MAYR LUKAS , LOEFFLER DANIEL , WALDMANN DANIEL
IPC: C23C14/58 , C23C16/455 , C23C16/56
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8.发明专利
公开(公告)号：SG11201810120VA
公开(公告)日：2019-02-27
申请号：SG11201810120V
申请日：2017-07-14
Applicant: BASF SE
Inventor： LIMBURG CAROLIN , LOEFFLER DANIEL , WILMER HAGEN , WALTER MARC , REINERS MATTHIAS
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