公开(公告)号：SG11201804019QA

公开(公告)日：2018-06-28

申请号：SG11201804019Q

申请日：2016-11-29

Applicant: BASF SE

Inventor： ABELS FALKO ,  SCHWEINFURTH DAVID ,  MATOS KARL ,  LOEFFLER DANIEL ,  AHLF MARAIKE ,  BLASBERG FLORIAN ,  SCHAUB THOMAS ,  SPIELMANN JAN ,  KIRSTE AXEL ,  GASPAR BORIS

IPC: C23C16/455 ,  C07F5/02 ,  C07F7/02 ,  C07F9/547 ,  C23C16/06 ,  C23C16/18

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.