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    PROCESS AND APPARATUS FOR SWITCHING REDOXACTIVE CELLS
    4.
    发明专利
    PROCESS AND APPARATUS FOR SWITCHING REDOXACTIVE CELLS 未知

    公开(公告)号：CA3016378A1

    公开(公告)日：2017-09-14

    申请号：CA3016378

    申请日：2017-03-07

    Applicant: BASF SE

    Inventor： WALDMANN DANIEL ,  ROEDER JENS ,  GOEBEL MICHAEL ,  AHLF MARAIKE

    IPC: G02F1/155 ,  G02F1/163

    Abstract: The invention relates to a process for switching an electrochromic cell (100) comprising at least a first electrode layer (106) and a second electrode layer (108) each capable of reversibly inserting ions. Further the cell (100) comprises an ion-conducting layer (110) that separates the first electrode layer (106) and the second electrode layer (108) and a temperature sensor (216) for measuring a temperature (T) in or on or in the vicinity of the electrochromic cell (100). Moreover, a first contact member (101) is electronically connected with the first electrode layer (106) and a second contact member (102) is electronically connected with the second electrode layer (108), wherein the first (106) and the second electrode layer (108) are counter electrodes to each other. Furthermore, at least said first electrode layer (106) comprises an organic polymer matrix and dispersed within said organic polymer matrix an electrochromic material, electronically conductive nanoobjects (112) and an electrolyte (114) dissolved in a solvent. Further, the process comprises to measure the current (iC) flowing through the cell (100) if a voltage (UC) is applied to the electrode layers (106, 108), and applying a voltage (UC) to contact members (101, 102) and varying the applied voltage (UC) as a function of current (iC), such that the voltage (UC) generated between the electrode layers (106, 108) is kept within predetermined temperature (T) dependent safe redox limits and such that the cell current (iC) is limited to predetermined temperature-dependent limits. Moreover, the applied voltage (UC) is only increased if the cell current (iC) is less than a maximum cell current (imax), determined according to: imax = jmax x Area + (T-T0) x F, where jmax is a predetermined maximum current density, Area is the active cell area, T is the temperature of the electrochromic cell (100) measured with the temperature sensor (216), T0 is a reference temperature, and F a factor. Further, the invention relates to an apparatus (200) and a system (300) for performing the process.

    ELECTROCHROMIC DEVICES
    5.
    发明专利
    ELECTROCHROMIC DEVICES 未知

    公开(公告)号：CA3014101A1

    公开(公告)日：2017-08-17

    申请号：CA3014101

    申请日：2017-02-07

    Applicant: BASF SE

    Inventor： GOEBEL MICHAEL ,  ROEDER JENS ,  SEELER FABIAN ,  AHLF MARAIKE ,  NOERENBERG RALF ,  BECK ERICH

    IPC: G02F1/15 ,  B82Y40/00 ,  C09D11/38 ,  C09D11/52 ,  C09K9/00

    Abstract: Described are electrochromic devices and compositions as well as manufacturing methods for making such electrochromic devices by printing or wet processing of the compositions. The compositions are in the form of a suspension and comprise two or more monomers, nanoparticles of an electrochromic metal oxide, one or more metal salts of the form (M)z(R)y, where M is a metal cation and R is the corresponding salt anion, a carrier liquid and a solvent. The compositions are polymerised to form a composite layer comprising a polymer matrix that hosts the electrochromic nanoparticles and the electrolyte. At least a part of the metal salts (e.g. zinc acetate) is physically adsorbed onto the surface of the nanoparticles and acts as a dispersant.

    PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS
    7.
    发明专利
    PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS 未知

    公开(公告)号：SG11201902257TA

    公开(公告)日：2019-05-30

    申请号：SG11201902257T

    申请日：2017-10-18

    Applicant: BASF SE

    Inventor： AHLF MARAIKE ,  SCHWEINFURTH DAVID DOMINIQUE ,  MAYR LUKAS ,  LESZCZYNSKA KINGA IZABELA ,  SCHESCHKEWITZ DAVID

    IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

    Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111111111111111111111111 01111101 0 11H0111101111 11111110111111111101111 0111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/077684 Al 03 May 2018 (03.05.2018) WIP0 I PCT (51) International Patent Classification: EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, C23C 16/455 (2006.01) C23C 16/34 (2006.01) MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, C23C 16/40 (2006.01) C23C 16/32 (2006.01) TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (21) International Application Number: PCT/EP2017/076556 Published: (22) International Filing Date: — with international search report (Art. 21(3)) 18 October 2017 (18.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16195487.0 25 October 2016 (25.10.2016) EP (71) Applicants: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, 67056 Ludwigshafen am Rhein (DE). UNIVERSITAET DES SAARLANDES [DE/DE]; Campus, 66123 Saar- brficken (DE). — (72) Inventors: AHLF, Maraike; Carl-Bosch-Strasse 38, 67056 Ludwigshafen (DE). SCHWEINFURTH, David Dominique; Carl-Bosch-Strasse 38, 67056 Ludwigshafen — (DE). MAYR, Lukas; Carl-Bosch-Strasse 38, 67056 = Ludwigshafen (DE). LESZCZYNSKA, Kinga Izabela; Campus, 66123 Saarbrficken (DE). SCHESCHKEWITZ, David; Campus, 66123 Saarbrficken (DE). _ Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - (74) C006, 67056 Ludwigshafen (DE). = (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = _ CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, = = = KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, _ = _ OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = = = Designated States (unless otherwise indicated, for every (84) = kind of regional protection available): ARIPO (BW, GH, — GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 1-1 ..! (54) Title: PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS 71' (57) : The present invention is in the field of processes for the GC generation of thin inorganic films on substrates. In particular, the present IN invention relates to a process comprising depositing the compound of gen- R 5 R 2 t - - c;;;; ) L,----Si—X n (I) L = eral formula (I) onto a solid substrate, wherein R1, R 2 , R, R 3 4 , and R s is --.... 00 hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, R R 1 wherein not more than three of R 1 , R, R, R 2 3 4 , and R 5 are hydrogen, X 0 ei is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.

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