公开(公告)号：MY171165A

公开(公告)日：2019-09-28

申请号：MYPI2014002274

申请日：2013-01-24

Applicant: BASF SE

Inventor： VENKATARAMAN SHYAM SUNDAR ,  LI YUZHUO ,  ZHONG MINGJIE

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (?SH), thioether (?SR1 )or thiocarbonyl (>C=S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (?OH) groups and does not comprise any carboxylic acid (?COOH) or carboxylate (?COO -) groups, and (C)an aqueous medium. (No suitable figure)

公开(公告)号：SG11201404613VA

公开(公告)日：2014-09-26

申请号：SG11201404613V

申请日：2013-01-24

Applicant: BASF SE

Inventor： VENKATARAMAN SHYAM SUNDAR ,  ZHONG MINGJIE

IPC: C11D7/22 ,  H01L21/02

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.

公开(公告)号：EP2688688A4

公开(公告)日：2014-12-31

申请号：EP12760859

申请日：2012-02-28

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  RAMAN VIJAY IMMANUEL ,  VENKATARAMAN SHYAM SUNDAR ,  MELLIES RAIMUND ,  ZHONG MINGJIE

IPC: H01L21/02 ,  C11D1/72 ,  C11D1/825 ,  C11D3/20 ,  C11D11/00 ,  H01L21/306

CPC classification number: H01L21/02074 ,  C11D1/662 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D1/825 ,  C11D3/0073 ,  C11D3/2041 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/3757 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/426

公开(公告)号：EP2812422A4

公开(公告)日：2016-10-19

申请号：EP13746032

申请日：2013-01-24

Applicant: BASF SE ,  BASF SCHWEIZ AG

Inventor： LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  ZHONG MINGJIE

IPC: C11D7/22 ,  H01L21/02

CPC classification number: C11D3/3427 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.