Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate (100). The cathodic structure includes a emitter electrode metal (102) composed of strips of aluminum overlain by a layer of cladding material.
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate (100). The cathodic structure includes a emitter electrode metal (102) composed of strips of aluminum overlain by a layer of cladding material.
Abstract:
An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). An electron-emissive element (54) overlies an upper layer (50) of the resistor. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound. In fabricating the device, the upper resistive layer normally serves as an etch stop for protecting the lower resistive layer and the emitter electrode during the etch of an overlying dielectric layer (52) to form an opening (56) in which the electron-emissive element is later provided.
Abstract:
A thin film coupled to a substrate includes a first layer (102) which is doped with nitrogen and a second layer (104) which is not doped with nitrogen. Both layers are made of the same material, which is either a transition or a refractory metal. The invention improves stress levels in these layers.
Abstract:
Integrated circuits (10), including field emission devices (7), have a resistor element (4) of amorphous SixC1-x wherein 0∫x∫1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.