公开(公告)号：DE3751242D1

公开(公告)日：1995-05-24

申请号：DE3751242

申请日：1987-01-22

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KAWAKAMI SOICHIRO ,  ITABASHI SATOSHI ,  TERADA KATSUNORI ,  GOFUKU IHACHIRO ,  NAKAGAWA KATSUMI ,  HATANAKA KATSUNORI ,  ISOBE YOSHINORI ,  SAIKA TOSHIHIRO C O CANON DAIN ,  KANEKO TETSUYA ,  KITAHARA NOBUKO ,  SUZUKI HIDEYUKI

IPC: H01L27/146 ,  H01L27/14

公开(公告)号：GB2185852A

公开(公告)日：1987-07-29

申请号：GB8701421

申请日：1987-01-22

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20 ,  H01L21/28 ,  H01L31/08

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

公开(公告)号：GB2185852B

公开(公告)日：1990-03-21

申请号：GB8701421

申请日：1987-01-22

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

公开(公告)号：DE3702187A1

公开(公告)日：1987-07-30

申请号：DE3702187

申请日：1987-01-26

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20 ,  H01L31/18

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

公开(公告)号：DE3751242T2

公开(公告)日：1995-09-14

申请号：DE3751242

申请日：1987-01-22

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KAWAKAMI SOICHIRO ,  ITABASHI SATOSHI ,  TERADA KATSUNORI ,  GOFUKU IHACHIRO ,  NAKAGAWA KATSUMI ,  HATANAKA KATSUNORI ,  ISOBE YOSHINORI ,  SAIKA TOSHIHIRO C O CANON DAIN ,  KANEKO TETSUYA ,  KITAHARA NOBUKO ,  SUZUKI HIDEYUKI

IPC: H01L27/146 ,  H01L27/14

公开(公告)号：JPS62172754A

公开(公告)日：1987-07-29

申请号：JP1378286

申请日：1986-01-27

Applicant: CANON KK

Inventor： FURUSHIMA TERUHIKO ,  SUZUKI HIDEYUKI ,  ITABASHI SATORU ,  TERADA KATSUNORI ,  MASAKI YUICHI

IPC: H01L27/146 ,  H01L31/0248

Abstract: PURPOSE:To preferably maintain an ohmic contact, to obtain preferable sensor characteristics and to readily form electrodes of fine wire width pattern by directly contacting the electrodes with a plurality of ohmic contact layers of laminated films so that the lowermost layer is made of copper-aluminum alloy of predetermined copper content and the layer above the uppermost layer is made of high purity aluminum. CONSTITUTION:An a-Si photoconductive layer 4 is deposited by a glow discharge decomposition on one side surface of a glass substrate 2. Then, a P-doped a-Si layer 6 is then similarly deposited. Subsequently, an Al-Cu layer 10-1 is deposited by a target of Al-Cu (5% of Cu content) by a sputtering method, and a P-type Al layer 10-2 is deposited by a target of P-Al (99.99% of Al content) on the layer 10-1. Then, a positive type photoresist is coated, and formed in a predetermined pattern, the exposed portion of the P-type Al layer is removed with an etchant mixture, and the exposed portion of the Cu-Al layer is then also removed to form electrodes 8, 10. At this time, the width lof the opposed end projections of the electrodes is approx. 5mum. Thereafter, the photoresist is removed, the P-doped a-Si layer is further removed by plasma etching to form an ohmic contact layer 6.

公开(公告)号：JPS62171154A

公开(公告)日：1987-07-28

申请号：JP1198186

申请日：1986-01-24

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KAWAKAMI SOICHIRO ,  ITABASHI SATORU ,  TERADA KATSUNORI ,  GOFUKU IHACHIROU ,  NAKAGAWA KATSUMI

IPC: H01L27/14 ,  H01L27/146 ,  H04N1/028

Abstract: PURPOSE:To decrease the number of the processes of a photosensor, with which a TFT is coupled, largely, and to manufacture the photosensor, whose cost is low, by constituting a photoconductive layer in a photoelectric conversion section and at least one part of a semiconductor layer in a transistor for trans fer of the same amorphous silicon layer. CONSTITUTION:A lower layer electrode 2 for a capacitor and a gate electrode 3 are formed, and an insulating layer 4 composed of silicon nitride, an amor phous silicon intrinsic layer 5 and an n layer 6 as an ohmic contact layer are deposited. A desired pattern is shaped by using a positive type photo-resist, unnecessary section in the n layer and the amorphous silicon intrinsic layer are removed through dry etching by CF4 gas at RF discharge power of 100W and gas pressure of 0.30Torr through a plasma etching method, and an amor phous silicon photoconductive layer 7 and a semiconductor layer 8 are shaped. Processes required for preparation can be decreased, and a photoelectric conver sion section and a TFT section can be formed adjacently, thus allowing the improvement of the degree of integration of a photosensor array, miniaturization and the large reduction of the area of a substrate.

公开(公告)号：JPH06196699A

公开(公告)日：1994-07-15

申请号：JP6377991

申请日：1991-03-06

Applicant: CANON KK

Inventor： TERADA KATSUNORI

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To provide a semiconductor device, in which a gate electrode is composed of at least two layers of metallic layers, stable performance can be ensured in the semiconductor of a thin-film manufactured while a function is separated into a layer taking an ohmic contact and a layer preventing a diffusion and yield is improved and productivity is enhanced, and manufacture thereof. CONSTITUTION:A semiconductor device is constituted by successively depositing a gate insulating layer 3, a semiconductor layer 4 and a doping layer 5 for source-drain on a gate electrode formed onto an insulating substrate 1. The gate electrode is configured in multilayer structure by at least a first metallic layer 2 on the insulating substrate side and a second metallic layer 9 on the gate insulating layer side, a material having higher conductivity than the second metallic layer is used as the first metallic layer, and the second metallic layer is composed of a material having more excellent heat resistance than the first metallic layer.

公开(公告)号：JPS62213261A

公开(公告)日：1987-09-19

申请号：JP5662486

申请日：1986-03-14

Applicant: CANON KK

Inventor： UMIBE NORIYUKI ,  HITOTSUBASHI HIROO ,  KOMIYAMA KATSUMI ,  MURATA MASAYOSHI ,  ITABASHI SATORU ,  TERADA KATSUNORI ,  KODAMA HIROMI ,  SUZUKI HIDEYUKI ,  MORIMOTO KENJI ,  SHIMADA TETSUYA

IPC: H01L27/146 ,  H01L21/60 ,  H01L23/528 ,  H01L27/144

Abstract: PURPOSE:To simplify the processes, improve the yield, reliability and characteristics and facilitate cost savings by a method wherein a long device array part and a wiring part are provided and electric contact parts of the respective functional devices and the corresponding wirings are connected together by wire bonding in the manner of matrix wiring. CONSTITUTION:A wiring board 11 is composed of an insulating substrate 7 and a wiring part which is formed by patterning a layer of a conductive film 12, formed on the substrate 7, into required form. The wiring part is composed of bonding pads 6 and the wirings 13. The respective functional devices in a long device array board 10 are electrically connected to the corresponding wirings 13 in the wiring board 11 with wires 9 by wire bonding. For instance, the individual functional devices in the long device array board 10 are connected to the corresponding wires and the wirings 13 and the wires 9 constitute a matrix wiring parts. Therefore, by utilizing the wire 9 as a part of the matrix wiring positively, the matrix wiring can be obtained with the combination of the device array board 10 and the wiring board 11 of the simple wiring structure.

公开(公告)号：JPS60242323A

公开(公告)日：1985-12-02

申请号：JP9637084

申请日：1984-05-16

Applicant: CANON KK

Inventor： TERADA KATSUNORI ,  MASAKI YUUICHI ,  KAKIMOTO SEIJI ,  SEKIMURA NOBUYUKI

IPC: G01J1/02 ,  H01L31/0224 ,  H01L31/0248

Abstract: PURPOSE:To secure the sufficient strength of a connection with a driving circuit by making the thickness of an electrode larger at a driving circuit connection side opposite to a photoelectric conversion part than at a photoelectric conversion part side. CONSTITUTION:An amorphous silicon film 2 is formed on a glass substrate 1 to an about 0.7mum thickness, and then an ohmic contact layer 3 is formed to an about 0.1mum thickness and an Al layer 4 is formed thereupon to a 0.2mum thickness. Thus, a couple of Al electrodes 4a and 4b are obtained and the exposed part of the layer 3 is etched away. Then, a specific part at the photoelectric conversion side is covered with a mask and Al is provided at specific part at the driving circuit connection side to a 0.5mum thickness, and photolithographic patterning is carried out to leave Al only on the electrode 4b, thereby forming a conductive material 5. Consequently, the end part of the driving circuit connection side of the electrode 4b is made thicker to 0.7mum.