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    1.
    发明专利
    未知

    公开(公告)号：DE3500645C2

    公开(公告)日：1997-09-11

    申请号：DE3500645

    申请日：1985-01-10

    Applicant: CANON KK

    Inventor： FURUSHIMA TERUHIKO ,  MASAKI YUICHI ,  FUKAYA MASAKI ,  SEKIMURA NOBUYUKI

    IPC: H01L21/443 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/09

    Abstract: A photosensor array comprises a substrate, a photoconductive layer and electrode layers between which the photoconductive layer is provided, wherein an opaque electroconductive layer is provided at a side opposite to a side to which a signal light is projected, and an insulating layer intervenes between the opaque electroconductive layer and the combination of the electrodes and the photoconductive layer. In a photosensor array of a matrix driving type using a multilayer wiring, an insulating layer between electrodes at the multilayer wiring portion and a protective insulating layer at a photoelectric transducer portion are continuously formed by using the same material.

    2.
    发明专利
    未知

    公开(公告)号：DE3587805D1

    公开(公告)日：1994-06-01

    申请号：DE3587805

    申请日：1985-10-03

    Applicant: CANON KK

    Inventor： FUKAYA MASAKI ,  KOMATSU TOSHIYUKI ,  SHOJI TATSUMI ,  KAMIO MASARU ,  SEKIMURA NOBUYUKI

    IPC: H01L27/146 ,  H04N1/031 ,  H04N1/193 ,  H01L31/08 ,  H01L31/02 ,  H04N1/028

    Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6.328 A in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

    PHOTOSENSOR ARRAY FOR IMAGE PROCESSING APPARATUS
    4.
    发明专利
    PHOTOSENSOR ARRAY FOR IMAGE PROCESSING APPARATUS 未知

    公开(公告)号：GB2184886B

    公开(公告)日：1989-10-11

    申请号：GB8629106

    申请日：1986-12-05

    Applicant: CANON KK

    Inventor： ITABASHI SATOSHI ,  SHOJI TATSUMI ,  FUKAYA MASAKI

    IPC: H01L27/14 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/0392 ,  H01L31/08 ,  H01L31/09

    Abstract: A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.

    METHOD OF PRODUCING PHOTOSENSOR
    5.
    发明专利
    METHOD OF PRODUCING PHOTOSENSOR 未知

    公开(公告)号：GB2185852A

    公开(公告)日：1987-07-29

    申请号：GB8701421

    申请日：1987-01-22

    Applicant: CANON KK

    Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

    IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20 ,  H01L21/28 ,  H01L31/08

    Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

    Photosensor array
    6.
    发明专利
    Photosensor array 未知

    公开(公告)号：GB2175478A

    公开(公告)日：1986-11-26

    申请号：GB8608824

    申请日：1986-04-11

    Applicant: CANON KK

    Inventor： HATANAKA KATSUNORI ,  NAKAGAWA KATSUMI ,  FUKAYA MASAKI ,  KAWAKAMI SOICHIRO

    IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028 ,  H04N1/03 ,  H04N1/193 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

    Abstract: Each photosensor Sr1... in an array is connected in parallel with a FET switch STr1 ..., which is normally closed to by-pass the photosensor. The photoresistors in each column are connected in series. To read any photoresistor its associated switch is opened via a row conductor Tr, Tg, Tb and an output sensed at the base A1, A2,..., An of the column. Series connection allows fewer conductors to be used compared to the prior art (fig. 3). … In an alternative embodiment, each photoresistor and FET switch is replaced by a single photosensitive FET (fig. 7). … …

    7.
    发明专利
    未知

    公开(公告)号：DE3612814A1

    公开(公告)日：1986-10-16

    申请号：DE3612814

    申请日：1986-04-16

    Applicant: CANON KK

    Inventor： KOMATSU TOSHIYUKI ,  FUKAYA MASAKI ,  ITABASHI SATOSHI

    IPC: H01L27/146 ,  H01L27/14 ,  H01L31/0248 ,  H01L31/08 ,  H01L31/09 ,  H01L31/20 ,  H01L31/18 ,  C01B33/00

    Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

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