公开(公告)号：JPH07295667A

公开(公告)日：1995-11-10

申请号：JP32961594

申请日：1994-12-02

Applicant: CONS RIC MICROELETTRONICA ,  ST MICROELECTRONICS SRL

Inventor： SCACCIANOCE SALVATORE ,  PALARA SERGIO ,  AIELLO NATALE

IPC: G05F3/30

Abstract: PURPOSE: To provide a circuit that generates a reference voltage with negative temperature coefficient together with a band gap reference voltage with positive temperature coefficient. CONSTITUTION: This circuit includes a network consisting of a Vbe voltage multiplier circuit (K'Vbe) circulating a properly stabilized current against change in a supply voltage between an output node A of an amplifier and a band gap voltage generating network, at least one resistor R connected between a band gap voltage node and ground, and resistive voltage dividers R1, R2 connected to between an output node and ground.

公开(公告)号：DE69618343D1

公开(公告)日：2002-02-07

申请号：DE69618343

申请日：1996-05-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： AIELLO NATALE ,  PATTI DAVIDE ,  SCACCIANOCE SALVATORE ,  LEONARDI SALVATORE

IPC: H01L21/8224 ,  H01L21/8228 ,  H01L27/082 ,  H01L27/00

公开(公告)号：DE69614831T2

公开(公告)日：2001-12-20

申请号：DE69614831

申请日：1996-05-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： AIELLO NATALE ,  PATTI DAVIDE ,  LEONARDI SALVATORE ,  SCACCIANOCE SALVATORE

IPC: H01L27/00 ,  H01L27/07 ,  H01L27/082

公开(公告)号：DE69609053D1

公开(公告)日：2000-08-03

申请号：DE69609053

申请日：1996-05-14

Applicant: CONS RIC MICROELETTRONICA

Inventor： SCACCIANOCE SALVATORE ,  SUERI STEFANO

IPC: H01L21/8224 ,  H01L27/082 ,  H01L29/00

Abstract: An integrated semiconductor structure (500) comprises two homologous P-type regions (120 and 130) formed within an N-type epitaxial layer (110). A P-type region (510) formed in the portion of the epitaxial layer (110) disposed between the two P-type regions (120 and 130) includes within it an N-type region (520); this N region (520) is electrically connected to the P region (130) by means of a surface metal contact (530). The structure reduces the injection of current between the P region 120 and the P region 130, at the same time preventing any vertical parasitic transistors from being switched on.

公开(公告)号：DE69308131T2

公开(公告)日：1997-05-28

申请号：DE69308131

申请日：1993-08-18

Applicant: CONS RIC MICROELETTRONICA

Inventor： AIELLO NATALE ,  PALARA SERGIO ,  SCACCIANOCE SALVATORE

IPC: H03G11/00 ,  H03K17/0812 ,  H03K17/082 ,  H03K17/16 ,  H03K17/08

公开(公告)号：DE69614831D1

公开(公告)日：2001-10-04

申请号：DE69614831

申请日：1996-05-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： AIELLO NATALE ,  PATTI DAVIDE ,  LEONARDI SALVATORE ,  SCACCIANOCE SALVATORE

IPC: H01L27/00 ,  H01L27/07 ,  H01L27/082

公开(公告)号：DE69609053T2

公开(公告)日：2001-03-29

申请号：DE69609053

申请日：1996-05-14

Applicant: CONS RIC MICROELETTRONICA

Inventor： SCACCIANOCE SALVATORE ,  SUERI STEFANO

IPC: H01L21/8224 ,  H01L27/082 ,  H01L29/00

Abstract: An integrated semiconductor structure (500) comprises two homologous P-type regions (120 and 130) formed within an N-type epitaxial layer (110). A P-type region (510) formed in the portion of the epitaxial layer (110) disposed between the two P-type regions (120 and 130) includes within it an N-type region (520); this N region (520) is electrically connected to the P region (130) by means of a surface metal contact (530). The structure reduces the injection of current between the P region 120 and the P region 130, at the same time preventing any vertical parasitic transistors from being switched on.

公开(公告)号：DE69618178D1

公开(公告)日：2002-01-31

申请号：DE69618178

申请日：1996-05-14

Applicant: CONS RIC MICROELETTRONICA

Inventor： SCACCIANOCE SALVATORE

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/866 ,  G05F1/00

Abstract: A monolithic, integrated semiconductor circuit comprising a high-voltage device (210) with a predetermined reverse-conduction threshold, typically a chain of Zener diodes (220-240) has, connected in series therewith, a thermal compensation device (250) constituted by a plurality of Vbe multipliers connected in series with one another. Each of the Vbe multipliers is formed by a resistive divider (R1i, R2i) and a low-voltage transistor (Ti) or two or more low-voltage transistors in a Darlington configuration.

公开(公告)号：DE69325027T2

公开(公告)日：1999-09-16

申请号：DE69325027

申请日：1993-12-02

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： SCACCIANOCE SALVATORE ,  PALARA SERGIO ,  AIELLO NATALE

IPC: G05F3/30

Abstract: A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.

公开(公告)号：DE69325027D1

公开(公告)日：1999-06-24

申请号：DE69325027

申请日：1993-12-02

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： SCACCIANOCE SALVATORE ,  PALARA SERGIO ,  AIELLO NATALE

IPC: G05F3/30

Abstract: A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.