公开(公告)号：JP2006265097A

公开(公告)日：2006-10-05

申请号：JP2006106642

申请日：2006-04-07

Applicant: Degussa Ag ,  デグサ アクチエンゲゼルシャフトDegussa AG

Inventor： BLUME ANKE DR ,  FREUND BURKHARD DR ,  SCHWAIGER BERNHARD ,  SIRAY MUSTAFA ,  UHRLANDT STEFAN DR

IPC: C01B33/021 ,  C01B33/193 ,  C08K3/36 ,  C08K7/00 ,  C08L21/00 ,  C09C1/30 ,  C09C3/12

CPC classification number: C09C1/3036 ,  C01B33/193 ,  C01P2002/54 ,  C01P2004/51 ,  C01P2004/53 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/80 ,  C01P2006/90 ,  C08K3/36 ,  Y02T10/862 ,  C08L21/00

Abstract: PROBLEM TO BE SOLVED: To provide precipitated silica and a method for manufacturing the same, with respect to development of precipitated silica for use in a base structure of a tire so as to lower rolling resistance.
SOLUTION: The precipitated silica has an Al
2 O
3 content of 0.2-5.0 wt.% and a wk coefficient of

Abstract translation: 待解决的问题：为了提供沉淀二氧化硅及其制造方法，关于用于轮胎的基底结构的沉淀二氧化硅的开发以降低滚动阻力。 解决方案：沉淀二氧化硅的含量为0.2-5.0重量％，wk系数<3.4。 沉淀二氧化硅是通过将碱金属硅酸盐，无机酸和铝盐溶液在水溶液中在60-95℃和pH为7.0-10.0的反应中进行反应而制备的，继续该反应至固体浓度为40 -110g / l，将pH调节至3-5，并通过已知方法对所得沉淀二氧化硅进行后处理。 沉淀二氧化硅可以用作橡胶共混物中的填料，特别是当轮胎中使用二氧化硅时，可以通过二氧化硅的易分散性降低轮胎的滚动阻力。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2000072434A

公开(公告)日：2000-03-07

申请号：JP24554199

申请日：1999-08-31

Applicant: DEGUSSA

Inventor： BLUME ANKE DR ,  FREUND BURKHARD DR ,  SCHWAIGER BERNHARD ,  SIRAY MUSTAFA ,  UHRLANDT STEFAN DR

IPC: C01B33/021 ,  C01B33/193 ,  C08K3/36 ,  C08L21/00 ,  C09C1/30

Abstract: PROBLEM TO BE SOLVED: To provide precipitated silicic acid which can be used as a filler in a rubber mixture and especially when used in a tire, can significantly decrease the rolling resistance of the tire due to its easy dispersibility and to provide its producing method. SOLUTION: This precipitated silicic acid has 0.2 to 5.0 wt.% Al2O3 content and

公开(公告)号：WO2010037694A2

公开(公告)日：2010-04-08

申请号：PCT/EP2009062487

申请日：2009-09-28

Applicant: EVONIK DEGUSSA GMBH ,  RAULEDER HARTWIG ,  MUEH EKKEHARD ,  SIRAY MUSTAFA ,  NAGLER PETER ,  FRINGS BODO ,  LUNT-RIEG INGRID ,  KARL ALFONS ,  PANZ CHRISTIAN ,  GROTH THOMAS ,  STOCHNIOL GUIDO ,  ROCHNIA MATTHIAS ,  LANG JUERGEN ERWIN ,  WOLF OLIVER ,  SCHMITZ RUDOLF ,  NOWITZKI BERND ,  WEWERS DIETMAR

Inventor： RAULEDER HARTWIG ,  MUEH EKKEHARD ,  SIRAY MUSTAFA ,  NAGLER PETER ,  FRINGS BODO ,  LUNT-RIEG INGRID ,  KARL ALFONS ,  PANZ CHRISTIAN ,  GROTH THOMAS ,  STOCHNIOL GUIDO ,  ROCHNIA MATTHIAS ,  LANG JUERGEN ERWIN ,  WOLF OLIVER ,  SCHMITZ RUDOLF ,  NOWITZKI BERND ,  WEWERS DIETMAR

IPC: C01B33/025 ,  C01B31/02 ,  C01B31/36

CPC classification number: C01B33/025 ,  C01B32/05 ,  C01B32/956

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a silicon oxide, purified by acidic precipitation from an aqueous solution of a silicon oxide dissolved in an aqueous phase, using one or more pure carbon sources, the purified silicon oxide being obtained, in particular, by the precipitation of a silicon oxide dissolved in an aqueous phase in an acidifier. The invention also relates to a formulation containing an activator and to a device for producing silicon, a reactor and electrodes.

Abstract translation: 本发明涉及一种用于生产纯硅，的整体过程，其适合作为太阳能级硅，其包含的减少，通过从在水相中的二氧化硅的溶质的水溶液的酸性沉淀，纯化的二氧化硅与一种或多种纯的碳源，特别是通过将纯化的氧化硅 获得溶质沉淀在酸化剂的水相二氧化硅。 此外，本发明涉及一种包含活化剂的制剂，和用于生产硅，电抗器和电极的装置。

公开(公告)号：WO2010052285A3

公开(公告)日：2010-09-23

申请号：PCT/EP2009064717

申请日：2009-11-05

Applicant: EVONIK DEGUSSA GMBH ,  LANG JUERGEN ERWIN ,  RAULEDER HARTWIG ,  FRINGS BODO ,  SIRAY MUSTAFA ,  SCHMITZ RUDOLF ,  WEWERS DIETMAR ,  NAGLER PETER ,  WENDT RAINER ,  MARKOWZ GEORG

Inventor： LANG JUERGEN ERWIN ,  RAULEDER HARTWIG ,  FRINGS BODO ,  SIRAY MUSTAFA ,  SCHMITZ RUDOLF ,  WEWERS DIETMAR ,  NAGLER PETER ,  WENDT RAINER ,  MARKOWZ GEORG

IPC: B01J19/24 ,  C01B33/025 ,  C09C1/50

CPC classification number: C09C1/50 ,  C09C1/48 ,  C09C1/485 ,  C09C1/52 ,  C09C1/54 ,  F23D2900/21007 ,  F23G5/46 ,  F23G7/02 ,  F23G2206/203 ,  F28D15/00 ,  Y02E20/12 ,  Y02P20/124 ,  Y02P20/129 ,  Y02P20/13

Abstract: The object of the invention is a more energy-efficient system for utilizing waste heat and residual gases from the engineered generation of carbon compounds, such as carbon black, graphite or from sugar pyrolysis, using a coupling of energy-heat or a thermal heat-generating plant for generating electrical energy, in particular for operating melt furnaces, and/or for utilizing the waste heat in endothermal processes. The invention also relates to the use of waste heat.

Abstract translation: 本发明是提供一种从工业生产，如炭黑，石墨或Zuckerpyrolyse碳化合物的废热和废气的利用用于提供高能效的系统中，由热电联产或用于产生电能的火力发电厂的装置，特别是 熔炉的操作，和/或在吸热过程中使用废热以及相应使用废热。

公开(公告)号：WO2010037709A3

公开(公告)日：2010-07-22

申请号：PCT/EP2009062515

申请日：2009-09-28

Applicant: EVONIK DEGUSSA GMBH ,  RAULEDER HARTWIG ,  MUEH EKKEHARD ,  SIRAY MUSTAFA ,  NAGLER PETER ,  FRINGS BODO ,  LUNT-RIEG INGRID ,  KARL ALFONS ,  PANZ CHRISTIAN ,  GROTH THOMAS ,  STOCHNIOL GUIDO ,  ROCHNIA MATTHIAS ,  LANG JUERGEN ERWIN ,  WOLF OLIVER ,  SCHMITZ RUDOLF ,  NOWITZKI BERND ,  WEWERS DIETMAR

Inventor： RAULEDER HARTWIG ,  MUEH EKKEHARD ,  SIRAY MUSTAFA ,  NAGLER PETER ,  FRINGS BODO ,  LUNT-RIEG INGRID ,  KARL ALFONS ,  PANZ CHRISTIAN ,  GROTH THOMAS ,  STOCHNIOL GUIDO ,  ROCHNIA MATTHIAS ,  LANG JUERGEN ERWIN ,  WOLF OLIVER ,  SCHMITZ RUDOLF ,  NOWITZKI BERND ,  WEWERS DIETMAR

IPC: C01B33/025 ,  C01B31/02

CPC classification number: C01B33/025 ,  C01B32/05 ,  C01B33/148

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.

Abstract translation: 本发明涉及一种用于生产纯硅，其是适合作为太阳能级硅的整体方法，包括纯化的二氧化硅与一种或多种纯碳源的减少，其中所述纯化的二氧化硅，将其纯化为基本上溶解在含水氧化物相硅以及基于所述 二氧化硅获得的其它多价金属或金属氧化物的含量，不大于300ppm，优选小于100ppm，特别优选小于50ppm，已经根据本发明的小于10ppm的其它金属的，并且有利地由凝胶化在碱性介质中。 此外，本发明涉及一种包含活化剂和共同使用纯化的氧化硅与用于生产硅的活化剂的制剂。

公开(公告)号：CA2828030C

公开(公告)日：2020-03-24

申请号：CA2828030

申请日：2012-02-10

Applicant: EVONIK DEGUSSA GMBH

Inventor： PANZ CHRISTIAN ,  PAULAT FLORIAN ,  TITZ GUIDO ,  MULLER SVEN ,  ERLHOFER PETER ,  RUF MARKUS ,  FRINGS BODO ,  RAULEDER HARTWIG ,  BARTHEL THOMAS ,  SIRAY MUSTAFA ,  BEHNISCH JURGEN

IPC: C01B33/193

Abstract: The present invention relates to a method of purifying strong acids or strongly acidic media to remove di- and higher valent metal ions, which can be used within the context of the production of high-purity silica. The invention further relates to the use of special ion exchangers for carrying out the method according to the invention and the resultant high-purity silicas.

公开(公告)号：ZA201102327B

公开(公告)日：2012-01-25

申请号：ZA201102327

申请日：2011-03-29

Applicant: EVONIK DEGUSSA GMBH

Inventor： RAULEDER HARTWIG ,  SIRAY MUSTAFA ,  FRINGS BODO ,  KARL ALFONS ,  GROTH THOMAS ,  ROCHNIA MATTHIAS ,  WOLF OLIVIER ,  NOWITZKI BERND ,  MUH EKKEHARD ,  NAGLER PETER ,  LUNT-RIEG INGRID ,  PANZ CHRISTIAN ,  STOCHNIOL GUIDO ,  LANG JURGEN ERWIN ,  SCHMITZ RUDOLF ,  WEWERS DIETMAR

IPC: C01B20060101

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.

公开(公告)号：MY129444A

公开(公告)日：2007-04-30

申请号：MYPI9805596

申请日：1998-12-10

Applicant: EVONIK DEGUSSA GMBH

Inventor： SIRAY MUSTAFA ,  SCHEFFLER JOCHEN

IPC: C01B33/18 ,  C01B33/193 ,  C09C1/28 ,  C09C1/30 ,  C09C3/00 ,  C09D7/00

Abstract: THE PRECIPITATED SILICA HAS THE FOLLOWING PHYSICO-CHEMICAL PARAMETERS: BET SURFACE AREA (DIN 66131) IN M2/G 400 -600 DBP INDEX (DIN 53601) IN G/100 G 300 -360 COMPACTED DENSITY (DIN 53194) IN G/L 70 -140 GRINDOMETER VALUE (ISO 1524) IN μM 15 -50 SIZE DISTRIBUTION INDEX 1

公开(公告)号：AU736906B2

公开(公告)日：2001-08-02

申请号：AU9707698

申请日：1998-12-11

Applicant: DEGUSSA

Inventor： SIRAY MUSTAFA ,  SCHEFFLER JOCHEN

IPC: C01B33/18 ,  C01B33/193 ,  C09C1/28 ,  C09C1/30 ,  C09C3/00 ,  C09D7/00 ,  C01B33/12

Abstract: Precipitated silica with the specified physical-chemical parameters is new. Precipitated silica (I) with the following physical-chemical parameters is new: BET surface area = 400-600 m /g to DIN 66131; dibutyl phthalate (DBP) value = 300-360 g/100 g to DIN 53601; tamped density = 70-140 g/l to DIN 53194; grindometer value = 15-50 mu m to ISO 1524; particle size distribution index I = less than 1.0 by Malvern method, I = (d90 - d10)/2d50. Independent claims are also included for (a) precipitated silica (II) coated with a polyethylene wax emulsion and having specified physical chemical parameters; (b) the production of (I); and (c) the production of (II).

公开(公告)号：TR9801831A2

公开(公告)日：1999-10-21

申请号：TR9801831

申请日：1998-09-15

Applicant: DEGUSSA

Inventor： UHRLANDT STEFAN ,  SIRAY MUSTAFA ,  BLUME ANKE ,  FREUND BURKHARD

IPC: C01B33/187 ,  C01B33/193 ,  C08K3/36 ,  B60C1/00 ,  C09C1/30

CPC classification number: C01B33/193 ,  C01P2004/53 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/19 ,  C01P2006/90 ,  C08K3/36 ,  C08L21/00