公开(公告)号：EP2082989A3

公开(公告)日：2013-10-09

申请号：EP09150363.1

申请日：2009-01-12

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Glenn, Jack L. ,  Zarabadi, Seyed R.

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81B2201/0242 ,  B81C2203/0735

Abstract: A method of making a silicon integrated sensor on an SOI substrate is provided. The method includes the step of providing a substrate having an insulation layer on a top surface, and providing a silicon epitaxial layer on top of the insulation layer. The method also includes the steps of forming a first trench extending through the epitaxial layer and reaching the insulation layer so as to isolate a first portion of the epitaxial layer from a second portion of the epitaxial layer, and disposing a fill material within the first trench. The method also includes the steps of forming one or more electrical components on the first portion of the epitaxial layer, and forming one or more contacts on the second portion of the epitaxial layer. The method further includes the step of forming one or more second trenches in the second portion of the epitaxial layer so as to provide one or more moving element within the second portion of the epitaxial layer, wherein the one or more movable elements serve as sensing element.

公开(公告)号：EP2083246B1

公开(公告)日：2011-07-06

申请号：EP09150251.8

申请日：2009-01-08

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Johnson, Jack D.

IPC: G01C19/56

CPC classification number: G01C19/5684

公开(公告)号：EP2083246A1

公开(公告)日：2009-07-29

申请号：EP09150251.8

申请日：2009-01-08

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Johnson, Jack D.

IPC: G01C19/56

CPC classification number: G01C19/5684

Abstract: A motion sensor in the form of an angular rate sensor (10) and a method of making a sensor are provided and includes a support substrate (12) and a silicon sensing ring (14) supported by the substrate and having a flexural resonance.
Drive electrodes (20A) apply electrostatic force on the ring (14) to cause the ring to resonate. Sensing electrodes (20B) sense a change in capacitance indicative of vibration modes of resonance of the ring (14) so as to sense motion. A plurality of silicon support rings (16) connect the substrate (12) to the ring (14). The support springs (16) have portions (B1 and B2) are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5° and 67.5°, with respect to the crystalline orientation of the silicon. Also disclosed is a method of making a silicon integrated sensor.

Abstract translation: 提供角速率传感器（10）形式的运动传感器和制造传感器的方法，并且包括支撑衬底（12）和由衬底支撑并且具有弯曲共振的硅感测环（14）。 驱动电极（20A）在环（14）上施加静电力使环产生共振。 感测电极（20B）感测指示环（14）的谐振的振动模式的电容的变化，以便感测运动。 多个硅支撑环（16）将衬底（12）连接到环（14）。 支撑弹簧（16）具有部分（B1和B2）相对于硅的结晶取向以与硅的弹性模量（例如约22.5°和67.5°）基本匹配的角度定位。 还公开了制造硅集成传感器的方法。

公开(公告)号：EP2082989A2

公开(公告)日：2009-07-29

申请号：EP09150363.1

申请日：2009-01-12

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Glenn, Jack L. ,  Zarabadi, Seyed R.

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81B2201/0242 ,  B81C2203/0735

Abstract: A method of making a silicon integrated sensor on an SOI substrate is provided. The method includes the step of providing a substrate having an insulation layer on a top surface, and providing a silicon epitaxial layer on top of the insulation layer. The method also includes the steps of forming a first trench extending through the epitaxial layer and reaching the insulation layer so as to isolate a first portion of the epitaxial layer from a second portion of the epitaxial layer, and disposing a fill material within the first trench. The method also includes the steps of forming one or more electrical components on the first portion of the epitaxial layer, and forming one or more contacts on the second portion of the epitaxial layer. The method further includes the step of forming one or more second trenches in the second portion of the epitaxial layer so as to provide one or more moving element within the second portion of the epitaxial layer, wherein the one or more movable elements serve as sensing element.

Abstract translation: 提供了在SOI衬底上制造硅集成传感器的方法。 该方法包括提供在顶表面上具有绝缘层的衬底以及在绝缘层的顶部上提供硅外延层的步骤。 该方法还包括以下步骤：形成延伸穿过外延层并到达绝缘层的第一沟槽，以将外延层的第一部分与外延层的第二部分隔离，并将填充材料设置在第一沟槽 。 该方法还包括以下步骤：在外延层的第一部分上形成一个或多个电组件，以及在外延层的第二部分上形成一个或多个触点。 该方法还包括在外延层的第二部分中形成一个或多个第二沟槽以在外延层的第二部分内提供一个或多个移动元件的步骤，其中一个或多个可移动元件用作感测元件 。