公开(公告)号：EP1333503A3

公开(公告)日：2009-11-18

申请号：EP03075166.3

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chavan, Abhijeet V. ,  Logsdon, James H. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Speck, Robert K.

IPC: H01L35/00 ,  H01L27/16

CPC classification number: B81B3/0072 ,  B81B2201/0278 ,  B81B2203/0127 ,  G01J5/02 ,  G01J5/024 ,  G01J5/12 ,  H01L27/16 ,  H01L2224/48463

Abstract: A process using integrated sensor technology in which a micromachined sensing element (12) and signal processing circuit (14) are combined on a single semiconductor substrate (20) to form, for example, an infrared sensor (10). The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm (16), after the circuit fabrication process is completed. The process generally entails forming a circuit device (14) on a substrate (20) by processing steps that include forming multiple dielectric layers (34,36,38,44,46) and at least one conductive layer (40,50) on the substrate (20). The dielectric layers (34,36,38,44,46) comprise an oxide layer (34) on a surface of the substrate (20) and at least two dielectric layers (36,46) that are in tension, with the conductive layer (40,50) being located between the two dielectric layers (36,46). The surface of the substrate (20) is then dry etched to form a cavity (32) and delineate the diaphragm (16) and a frame (18) surrounding the diaphragm (16). The dry etching step terminates at the oxide layer (34), such that the diaphragm (16) comprises the dielectric layers (34,36,38,44,46) and conductive layer (40,50). A special absorber (52) is preferably fabricated on the diaphragm (16) to promote efficient absorption of incoming infrared radiation.

公开(公告)号：EP1340984A3

公开(公告)日：2005-12-28

申请号：EP03075310.7

申请日：2003-02-03

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Jay, Ian D. ,  Johnson, Jack D. ,  Christenson, John C. ,  Noll, Tracy A.

IPC: G01P15/08 ,  G01P15/125

CPC classification number: G01P15/0888 ,  G01P15/125

Abstract: A balanced angular accelerometer (10 or 110) is provided having a substrate (60), a fixed electrode (20A) with a plurality of fixed capacitive plates (24), and a rotational inertia mass (12) with a central opening (13) and substantially suspended over a cavity (34) and including a plurality of movable capacitive plates (14) arranged to provide a capacitive coupling with the first plurality of fixed capacitive plates (24). The accelerometer (10) has a central member (15) and an outer member (18) fixed to the substrate (60). According to one embodiment, a plurality of inner support arms (16A-16D) extend between the central member (15) and the inertia mass (12) and a plurality of outer support arms (40A-40D) extend between the inertia mass (12) and the outer member (18) to support the mass (12) over the cavity (34). According to another embodiment, one or more cut out apertures (150) are formed in the inertia mass (112) to compensate for a channel (141) and signal line (140) so as to balance the inertia mass (112) about the center of the inertia mass (112).

公开(公告)号：EP1340984A2

公开(公告)日：2003-09-03

申请号：EP03075310.7

申请日：2003-02-03

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Jay, Ian D. ,  Johnson, Jack D. ,  Christenson, John C. ,  Noll, Tracy A.

IPC: G01P15/08 ,  G01P15/125

CPC classification number: G01P15/0888 ,  G01P15/125

Abstract: A balanced angular accelerometer (10 or 110) is provided having a substrate (60), a fixed electrode (20A) with a plurality of fixed capacitive plates (24), and a rotational inertia mass (12) with a central opening (13) and substantially suspended over a cavity (34) and including a plurality of movable capacitive plates (14) arranged to provide a capacitive coupling with the first plurality of fixed capacitive plates (24). The accelerometer (10) has a central member (15) and an outer member (18) fixed to the substrate (60). According to one embodiment, a plurality of inner support arms (16A-16D) extend between the central member (15) and the inertia mass (12) and a plurality of outer support arms (40A-40D) extend between the inertia mass (12) and the outer member (18) to support the mass (12) over the cavity (34). According to another embodiment, one or more cut out apertures (150) are formed in the inertia mass (112) to compensate for a channel (141) and signal line (140) so as to balance the inertia mass (112) about the center of the inertia mass (112).

Abstract translation: 提供了具有基板（60），具有多个固定电容板（24）的固定电极（20A）和具有中心开口（13）的旋转惯性质量块（12）的平衡角加速度计（10或110） 并且基本上悬挂在空腔（34）上并且包括多个可移动电容板（14），其布置成提供与第一多个固定电容板（24）的电容耦合。 加速度计（10）具有中心构件（15）和固定到基底（60）的外部构件（18）。 根据一个实施例，多个内支撑臂（16A-16D）在中心构件（15）和惯性块（12）之间延伸，并且多个外支撑臂（40A-40D）在惯性块 ）和外部构件（18）以将质量块（12）支撑在空腔（34）上方。 根据另一实施例，一个或多个切口孔（150）形成在惯性质量块（112）中以补偿通道（141）和信号线（140），以平衡围绕中心的惯性质量（112） 的惯性质量（112）。

公开(公告)号：EP1702884B1

公开(公告)日：2012-02-08

申请号：EP06075521.2

申请日：2006-03-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Zarabadi, Seyed R. ,  Chilcott, Dan W.

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/18 ,  G01P15/125

CPC classification number: B81C1/00047 ,  B81B2201/0235 ,  B81B2203/033 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

公开(公告)号：EP2083246A1

公开(公告)日：2009-07-29

申请号：EP09150251.8

申请日：2009-01-08

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Johnson, Jack D.

IPC: G01C19/56

CPC classification number: G01C19/5684

Abstract: A motion sensor in the form of an angular rate sensor (10) and a method of making a sensor are provided and includes a support substrate (12) and a silicon sensing ring (14) supported by the substrate and having a flexural resonance.
Drive electrodes (20A) apply electrostatic force on the ring (14) to cause the ring to resonate. Sensing electrodes (20B) sense a change in capacitance indicative of vibration modes of resonance of the ring (14) so as to sense motion. A plurality of silicon support rings (16) connect the substrate (12) to the ring (14). The support springs (16) have portions (B1 and B2) are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5° and 67.5°, with respect to the crystalline orientation of the silicon. Also disclosed is a method of making a silicon integrated sensor.

Abstract translation: 提供角速率传感器（10）形式的运动传感器和制造传感器的方法，并且包括支撑衬底（12）和由衬底支撑并且具有弯曲共振的硅感测环（14）。 驱动电极（20A）在环（14）上施加静电力使环产生共振。 感测电极（20B）感测指示环（14）的谐振的振动模式的电容的变化，以便感测运动。 多个硅支撑环（16）将衬底（12）连接到环（14）。 支撑弹簧（16）具有部分（B1和B2）相对于硅的结晶取向以与硅的弹性模量（例如约22.5°和67.5°）基本匹配的角度定位。 还公开了制造硅集成传感器的方法。

公开(公告)号：EP2082989A2

公开(公告)日：2009-07-29

申请号：EP09150363.1

申请日：2009-01-12

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Glenn, Jack L. ,  Zarabadi, Seyed R.

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81B2201/0242 ,  B81C2203/0735

Abstract: A method of making a silicon integrated sensor on an SOI substrate is provided. The method includes the step of providing a substrate having an insulation layer on a top surface, and providing a silicon epitaxial layer on top of the insulation layer. The method also includes the steps of forming a first trench extending through the epitaxial layer and reaching the insulation layer so as to isolate a first portion of the epitaxial layer from a second portion of the epitaxial layer, and disposing a fill material within the first trench. The method also includes the steps of forming one or more electrical components on the first portion of the epitaxial layer, and forming one or more contacts on the second portion of the epitaxial layer. The method further includes the step of forming one or more second trenches in the second portion of the epitaxial layer so as to provide one or more moving element within the second portion of the epitaxial layer, wherein the one or more movable elements serve as sensing element.

Abstract translation: 提供了在SOI衬底上制造硅集成传感器的方法。 该方法包括提供在顶表面上具有绝缘层的衬底以及在绝缘层的顶部上提供硅外延层的步骤。 该方法还包括以下步骤：形成延伸穿过外延层并到达绝缘层的第一沟槽，以将外延层的第一部分与外延层的第二部分隔离，并将填充材料设置在第一沟槽 。 该方法还包括以下步骤：在外延层的第一部分上形成一个或多个电组件，以及在外延层的第二部分上形成一个或多个触点。 该方法还包括在外延层的第二部分中形成一个或多个第二沟槽以在外延层的第二部分内提供一个或多个移动元件的步骤，其中一个或多个可移动元件用作感测元件 。

公开(公告)号：EP2082989A3

公开(公告)日：2013-10-09

申请号：EP09150363.1

申请日：2009-01-12

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Glenn, Jack L. ,  Zarabadi, Seyed R.

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81B2201/0242 ,  B81C2203/0735

Abstract: A method of making a silicon integrated sensor on an SOI substrate is provided. The method includes the step of providing a substrate having an insulation layer on a top surface, and providing a silicon epitaxial layer on top of the insulation layer. The method also includes the steps of forming a first trench extending through the epitaxial layer and reaching the insulation layer so as to isolate a first portion of the epitaxial layer from a second portion of the epitaxial layer, and disposing a fill material within the first trench. The method also includes the steps of forming one or more electrical components on the first portion of the epitaxial layer, and forming one or more contacts on the second portion of the epitaxial layer. The method further includes the step of forming one or more second trenches in the second portion of the epitaxial layer so as to provide one or more moving element within the second portion of the epitaxial layer, wherein the one or more movable elements serve as sensing element.

公开(公告)号：EP1340984B1

公开(公告)日：2009-06-17

申请号：EP03075310.7

申请日：2003-02-03

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Jay, Ian D. ,  Johnson, Jack D. ,  Christenson, John C. ,  Noll, Tracy A.

IPC: G01P15/08 ,  G01P15/125

CPC classification number: G01P15/0888 ,  G01P15/125

公开(公告)号：EP1760039A2

公开(公告)日：2007-03-07

申请号：EP06076605.2

申请日：2006-08-21

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C.

IPC: B81C5/00

CPC classification number: B81B7/0006 ,  B81B2201/025 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.

Abstract translation: 一种用于在微电子机械系统（MEMS）装置（10）上制造地下电接触（34）的方法。 通过将多晶硅层（34）沉积在掩埋在器件硅层（24）下面的空腔（20）内的表面（16）上来形成触点（34）。 多晶硅层（34）通过穿过器件硅（24）蚀刻的孔（30和32）沉积在空腔（20）中，并且在多晶硅沉积步骤期间重新密封空腔（20）。 然后可以对多晶硅层（24）进行掩模和蚀刻，或者回蚀刻以暴露微机械加工装置（10）的装置层（24）。 通过多晶硅层34，可以使器件（10）的中心毂（18）电接触。

公开(公告)号：EP1524511A2

公开(公告)日：2005-04-20

申请号：EP04077771.6

申请日：2004-10-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Rich, David B.

IPC: G01M3/18 ,  G01M3/22 ,  G01M3/40

CPC classification number: G01M3/40 ,  G01M3/186 ,  G01M3/226

Abstract: The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that instability in the diode can be measurable over a longer period of time. The method begins with the step of forming at least one reservoir (30) on at least one of the device wafer (11) and the capping wafer (12). The at least one reservoir (30) connects to at least one diffusion channel (31), which is in communication with at least one reservoir port (32). The method further includes the steps of forming a PN junction diode (40) adjacent to the at least one reservoir port (32); bonding the device wafer (11) with the capping wafer (12) to form a cavity (16); and electrically testing the PN junction diode (40) as an indication of the presence of moisture within the cavity (16). The device assembly (10) of the present invention includes a capping wafer (12) bonded on a device wafer (11) to form a cavity (16); at least one reservoir (30) including at least one diffusion channel (31) for receiving a liquid and retaining moisture. The at least one diffusion channel communicates with at least one reservoir port (32), which is open into the cavity (16). An exposed PN junction diode (40) is provided adjacent to the at least one reservoir port (32), and a pair of metal pads (48,49) is connected to the exposed PN junction diode (40).

Abstract translation: 本发明涉及检测半导体或微加工装置的空腔内的水分的电验证方法。 该方法影响足够的水蒸汽保持在未密封装置内的时间的增加，使得二极管中的不稳定性可以在更长的时间内测量。 该方法开始于在至少一个器件晶片（11）和封盖晶片（12）上形成至少一个储存器（30）的步骤。 所述至少一个贮存器（30）连接至至少一个扩散通道（31），其与至少一个储存器端口（32）连通。 该方法还包括形成邻近至少一个储存器端口（32）的PN结二极管（40）的步骤; 将所述器件晶片（11）与所述封盖晶片（12）接合以形成空腔（16）; 以及电气测试所述PN结二极管（40），作为在所述空腔（16）内存在水分的指示。 本发明的装置组件（10）包括结合在装置晶片（11）上以形成空腔（16）的封盖晶片（12）; 至少一个储存器（30），其包括用于接收液体并保持水分的至少一个扩散通道（31）。 至少一个扩散通道与至少一个开口进入空腔（16）的储存口（32）连通。 暴露的PN结二极管（40）邻近所述至少一个储存器端口（32）设置，并且一对金属焊盘（48,49）连接到所述暴露的PN结二极管（40）。