Abstract:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and an ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
Abstract:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
Abstract:
A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a loadlock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.
Abstract:
An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.
Abstract:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
Abstract:
The present invention provides a loadlock assembly for a high throughput ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The loadlock assembly increases the throughput of the implantation system by continuously cycling workpieces through the process chamber, thus increasing the system's throughput. The loadlock assembly includes a plurality of loadlock stacking elements that are axially positioned relative to each other to form a stacked array of loadlocks. Additionally, the loadlocks of the array are configured to nest with an adjacent loadlock to form a stackable and nestable loadlock assembly.