公开(公告)号：WO2013156978A3

公开(公告)日：2014-01-23

申请号：PCT/IB2013053113

申请日：2013-04-19

Applicant: ECOLE POLYTECH

Inventor： BARTSCH SEBASTIAN THIMOTEE ,  IONESCU MIHAI ADRIAN

IPC: H03H9/02 ,  H03H9/24

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respectively; at least one fixed gate electrode (3, 3') arranged to control a depletion charge (5) in the highly doped conductive channel (4) thereby modulating dimensions of a cross-section of the highly doped conductive channel (4). A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode (3, 3') to the highly doped conductive channel (4), is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel (4) is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极（9）和源极（10）的高度掺杂的导电沟道（4），并且可移动地固定有至少两个端部（11,11'） 分别表示源极和漏极; 至少一个固定栅电极（3,3'）布置成控制高掺杂导电沟道（4）中的耗尽电荷（5），从而调制高掺杂导电沟道（4）的横截面的尺寸。 在从固定栅极（3,3'）定向到高度掺杂的导电通道（4）的电场方向上的横截面的尺寸被设计成使得其可以在 耗尽电荷的作用使得通过固定栅电极的控制可实现高掺杂导电沟道（4）中的完全耗尽。