公开(公告)号：US20240186446A1

公开(公告)日：2024-06-06

申请号：US18440306

申请日：2024-02-13

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor structure comprises a substrate, an adhesion layer, arranged on the substrate, a first release layer, arranged on the adhesion layer and a first semiconductor device, comprising a semiconductor epitaxial stack, and a conducting layer directly connected to the first release layer, wherein the first semiconductor device is not electrically connected to the substrate by the adhesion layer and the first release layer.

公开(公告)号：US20150200331A1

公开(公告)日：2015-07-16

申请号：US14153733

申请日：2014-01-13

Applicant: Epistar Corporation

Inventor： Kuang-Ping CHAO ,  Wen-Luh LIAO ,  Fu-Chun TSAI ,  Shih-I CHEN ,  Chia-Liang HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed.

Abstract translation: 公开了一种发光器件的制造方法。 该方法提供了在第一衬底上图案化半导体堆叠以便形成多个发光台面。 然后将第二衬底接合到多个发光台面，并且在第一衬底上形成反射结构。 然后将金属层施加在反射结构上，并且金属层被图案化以形成对应于多个发光台面的多个金属台面，其中一部分反射结构被暴露。

公开(公告)号：US20200321487A1

公开(公告)日：2020-10-08

申请号：US16908167

申请日：2020-06-22

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683

Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

公开(公告)号：US20150144975A1

公开(公告)日：2015-05-28

申请号：US14088705

申请日：2013-11-25

Applicant: EPISTAR CORPORATION

Inventor： Fu-Chun TSAI ,  Wen-Luh LIAO ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chih-Chiang LU

IPC: H01L33/30

CPC classification number: H01L33/30 ,  H01L33/0079 ,  H01L33/16

Abstract: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.

Abstract translation: 发光装置包括基板; 以及包括形成在所述基板上的III-V族材料的半导体堆叠，其中所述基板包括与所述半导体叠层相邻的第一非晶体部分和具有与所述第一非晶部分的材料不同的材料并远离所述半导体叠层的部分 其中，所述第一非晶部分具有第一折射率，所述部分具有第二折射率，并且所述第一折射率高于所述第二折射率且低于所述半导体叠层的折射率。

公开(公告)号：US20220123167A1

公开(公告)日：2022-04-21

申请号：US17646102

申请日：2021-12-27

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US20170373219A1

公开(公告)日：2017-12-28

申请号：US15683041

申请日：2017-08-22

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US20160079481A1

公开(公告)日：2016-03-17

申请号：US14949414

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Tzu-Chieh HSU ,  Fu-Chun TSAI ,  Yi-Wen HUANG ,  Chih-Chiang LU

IPC: H01L33/44 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。