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公开(公告)号:US11437427B2
公开(公告)日:2022-09-06
申请号:US16750227
申请日:2020-01-23
Applicant: EPISTAR CORPORATION
Inventor: Po-Shun Chiu , Tsung-Hsun Chiang , Liang-Sheng Chi , Jing Jiang , Jie Chen , Tzung-Shiun Yeh , Hsin-Ying Wang , Hui-Chun Yeh , Chien-Fu Shen
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号:US11810943B2
公开(公告)日:2023-11-07
申请号:US17901655
申请日:2022-09-01
Applicant: EPISTAR CORPORATION
Inventor: Po-Shun Chiu , Tsung-Hsun Chiang , Liang-Sheng Chi , Jing Jiang , Jie Chen , Tzung-Shiun Yeh , Hsin-Ying Wang , Hui-Chun Yeh , Chien-Fu Shen
CPC classification number: H01L27/153 , F21K9/00 , H01L33/36 , H01L33/62
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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