公开(公告)号：US11810943B2

公开(公告)日：2023-11-07

申请号：US17901655

申请日：2022-09-01

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

IPC: H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

CPC classification number: H01L27/153 ,  F21K9/00 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US11437427B2

公开(公告)日：2022-09-06

申请号：US16750227

申请日：2020-01-23

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

IPC: H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US09012933B2

公开(公告)日：2015-04-21

申请号：US13858504

申请日：2013-04-08

Applicant: Epistar Corporation

Inventor： Liang-Sheng Chi ,  Pei-Chia Chen ,  Chih-Hao Chen

IPC: H01L33/00 ,  H01L29/06 ,  H01L31/00 ,  H01L33/22 ,  H01L27/15

CPC classification number: H01L33/22 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer includes a first portion and a second portion, and the second portion includes an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion includes a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.

Abstract translation: 发光二极管包括基板，所述基板包括上表面，与所述上表面相对的底表面和侧表面; 在上表面上的第一类型半导体层，其中所述第一类型半导体层包括第一部分和第二部分，并且所述第二部分包括围绕所述第一部分的边缘; 在第一部分上的发光层; 和在发光层上的第二类型的半导体层，其中第二部分包括第一表面和第二表面，第一距离在第一表面和上表面之间，第二距离在第二表面和第二表面之间 上表面小于第一距离; 其中所述第一表面比所述第二表面更粗糙，并且所述第二表面位于所述边缘处。

公开(公告)号：US09583677B2

公开(公告)日：2017-02-28

申请号：US14690910

申请日：2015-04-20

Applicant: Epistar Corporation

Inventor： Liang-Sheng Chi ,  Pei-Chia Chen ,  Chih-Hao Chen

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/46 ,  H01L27/15

CPC classification number: H01L33/22 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.

Abstract translation: 制造发光二极管的方法包括以下步骤：提供包括与上表面相对的上表面和底表面的基板; 在所述上表面上提供半导体堆叠层，其中所述半导体堆叠层包括具有第一表面的第一类型半导体层，用于发光的所述第一类型半导体层上的发光层和所述光上的第二类型半导体层 发光层 处理所述第一表面以形成第二表面，其中所述第二表面比所述第一表面平坦; 以及提供通过所述第二表面的激光束以切割所述基板。