公开(公告)号：US12051767B2

公开(公告)日：2024-07-30

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/06 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

公开(公告)号：US20210135052A1

公开(公告)日：2021-05-06

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

公开(公告)号：US11588072B2

公开(公告)日：2023-02-21

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/14 ,  H01L33/08 ,  H01L33/02

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.