公开(公告)号：US11588072B2

公开(公告)日：2023-02-21

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/14 ,  H01L33/08 ,  H01L33/02

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

公开(公告)号：US10749077B2

公开(公告)日：2020-08-18

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US10580937B2

公开(公告)日：2020-03-03

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US12051767B2

公开(公告)日：2024-07-30

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/06 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

公开(公告)号：US11227978B2

公开(公告)日：2022-01-18

申请号：US16680214

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Cheng-Long Yeh ,  Ko-Yin Lai ,  Yao-Ru Chang ,  Yung-Fu Chang ,  Yi Hsiao ,  Shih-Chang Lee

IPC: H01L33/62 ,  H01L33/38

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

公开(公告)号：US20210135052A1

公开(公告)日：2021-05-06

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

公开(公告)号：US10205059B2

公开(公告)日：2019-02-12

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

公开(公告)号：US09331239B1

公开(公告)日：2016-05-03

申请号：US14793389

申请日：2015-07-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Cheng-Long Yeh ,  Rong-Ren Lee ,  Shih-Chang Lee

IPC: H01L29/06 ,  H01L27/15 ,  H01L31/0328 ,  H01L21/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/14 ,  H01L33/30

Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first cladding layer of n type, a second cladding layer of p type, and an active layer between the first cladding layer and the second cladding layer wherein the active layer comprises a well layer interposed between adjacent barrier layers. The light-emitting device further comprises a means for reducing a flicker noise of the light-emitting device.

Abstract translation: 提供了一种发光装置。 发光装置包括发光层，其包括n型的第一包层，p型的第二包层和在第一包层和第二包层之间的有源层，其中有源层包括阱层 介于相邻阻挡层之间。 发光装置还包括用于降低发光装置的闪烁噪声的装置。