公开(公告)号：US20210135052A1

公开(公告)日：2021-05-06

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

公开(公告)号：US10205059B2

公开(公告)日：2019-02-12

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

公开(公告)号：US11588072B2

公开(公告)日：2023-02-21

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/14 ,  H01L33/08 ,  H01L33/02

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

公开(公告)号：US09859470B2

公开(公告)日：2018-01-02

申请号：US15066095

申请日：2016-03-10

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.

公开(公告)号：US10749077B2

公开(公告)日：2020-08-18

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US10600938B2

公开(公告)日：2020-03-24

申请号：US15983964

申请日：2018-05-18

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/10 ,  H01L33/04 ,  H01L33/46 ,  H01L33/60 ,  H01L25/075

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

公开(公告)号：US10580937B2

公开(公告)日：2020-03-03

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US12051767B2

公开(公告)日：2024-07-30

申请号：US18099583

申请日：2023-01-20

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/06 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/08 ,  H01L33/20

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

公开(公告)号：US10008636B2

公开(公告)日：2018-06-26

申请号：US15796241

申请日：2017-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.