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公开(公告)号：US20210135052A1
公开(公告)日：2021-05-06
申请号：US17089377
申请日：2020-11-04
Applicant: EPISTAR CORPORATION
Inventor： Yen-Chun Tseng , Kuo-Feng Huang , Shih-Chang Lee , Ming-Ta Chin , Shih-Nan Yen , Cheng-Hsing Chiang , Chia-Hung Lin , Cheng-Long Yeh , Yi-Ching Lee , Jui-Che Sung , Shih-Hao Cheng
Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.
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公开(公告)号：US12051767B2
公开(公告)日：2024-07-30
申请号：US18099583
申请日：2023-01-20
Applicant: EPISTAR CORPORATION
Inventor： Yen-Chun Tseng , Kuo-Feng Huang , Shih-Chang Lee , Ming-Ta Chin , Shih-Nan Yen , Cheng-Hsing Chiang , Chia-Hung Lin , Cheng-Long Yeh , Yi-Ching Lee , Jui-Che Sung , Shih-Hao Cheng
CPC classification number: H01L33/14 , H01L33/025 , H01L33/08 , H01L33/20
Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.
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公开(公告)号：US12230736B2
公开(公告)日：2025-02-18
申请号：US17211331
申请日：2021-03-24
Applicant: EPISTAR CORPORATION
Inventor： Jian-Zhi Chen , Yen-Chun Tseng , Hui-Fang Kao , Yao-Ning Chan , Yi-Tang Lai , Yun-Chung Chou , Shih-Chang Lee , Chen Ou
Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.
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公开(公告)号：US11588072B2
公开(公告)日：2023-02-21
申请号：US17089377
申请日：2020-11-04
Applicant: EPISTAR CORPORATION
Inventor： Yen-Chun Tseng , Kuo-Feng Huang , Shih-Chang Lee , Ming-Ta Chin , Shih-Nan Yen , Cheng-Hsing Chiang , Chia-Hung Lin , Cheng-Long Yeh , Yi-Ching Lee , Jui-Che Sung , Shih-Hao Cheng
Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.
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