公开(公告)号：US20130314001A1

公开(公告)日：2013-11-28

申请号：US13957139

申请日：2013-08-01

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Mao LIU ,  Zong-Xi CHEN ,  Min-Hsun HSIEH ,  Chien-Yan WANG

IPC: H05B33/08

CPC classification number: H05B33/0854 ,  H01L25/167 ,  H01L27/153 ,  H01L2924/0002 ,  H05B33/0872 ,  H01L2924/00

Abstract: The present application provides a light-emitting device comprising a first light-emitting diode group; a second light-emitting diode group electrically connected to the first light-emitting diode group in parallel; and a temperature compensation. element electrically connected to the second light-emitting diode group in series; and a first switch device connected between the second light-emitting diode group and the temperature compensation element.

Abstract translation: 本发明提供一种包括第一发光二极管组的发光装置; 与第一发光二极管组并联电连接的第二发光二极管组; 和温度补偿。 元件串联电连接到第二发光二极管组; 以及连接在第二发光二极管组和温度补偿元件之间的第一开关装置。

公开(公告)号：US20190355863A1

公开(公告)日：2019-11-21

申请号：US15984950

申请日：2018-05-21

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Mao LIU ,  Hung-Chi WANG ,  Zong-Xi CHEN

IPC: H01L31/12 ,  H01L31/153 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/024 ,  H01L31/0224 ,  H01L49/02

Abstract: A sensing apparatus includes a sensing device having a hetero-junction structure, a light coupler connected to the sensing device and a readout device connected to the light coupler.

公开(公告)号：US20180128761A1

公开(公告)日：2018-05-10

申请号：US15804455

申请日：2017-11-06

Applicant: EPISTAR CORPORATION

Inventor： Kunal KASHYAP ,  Kun-Wei KAO ,  Yih-Hua RENN ,  Meng-Lun TSAI ,  Zong-Xi CHEN ,  Hsin-Mao LIU ,  Jui-Hung YEH ,  Hung-Chi WANG

IPC: G01N27/02 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L23/34

CPC classification number: G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

公开(公告)号：US20140070250A1

公开(公告)日：2014-03-13

申请号：US13856220

申请日：2013-04-03

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

IPC: H01L33/50

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。