公开(公告)号：US20180128774A1

公开(公告)日：2018-05-10

申请号：US15664947

申请日：2017-07-31

Applicant: EPISTAR CORPORATION

Inventor： Kunal KASHYAP ,  Kun-Wei KAO ,  Meng-Lun TSAI

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 μm.

公开(公告)号：US20240405181A1

公开(公告)日：2024-12-05

申请号：US18733304

申请日：2024-06-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Wei-Yu CHEN ,  Li-Shen TANG ,  Kun-Wei KAO ,  Jia-Xing CHUNG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chang-Tai HSIAO ,  Yih-Hua RENN ,  Chun-Yen WU

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/40

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This arrangement includes a substrate, an adhesive structure, and a first semiconductor device. The substrate includes an upper surface. The adhesive structure is located on the upper surface and includes a first concave region. The first semiconductor device includes a lower surface facing toward the adhesive structure and a conductive bump located under the lower surface and in the first concave region. The conductive bump includes a first portion and a second portion. Wherein the lower surface does not contact the adhesive structure, the first portion contacts the first concave region, and the second portion does not contact the first concave region.

公开(公告)号：US20240332264A1

公开(公告)日：2024-10-03

申请号：US18615912

申请日：2024-03-25

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Kun-Wei KAO ,  Teng-Hui HSIEH

IPC: H01L25/075 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/62

Abstract: A pixel package includes a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a transparent layered structure, and a first conductive structure. The first light-emitting diode has a first light-emitting surface and a first bottom surface opposite thereto, and the first light-emitting diode is arranged side by side with the second light-emitting diode over the first light-emitting surface. The transparent layered structure encapsulates and separates the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode. The first conductive structure has a first portion and a second portion. The first portion is located between the first light-emitting diode and the first light-emitting surface. The second portion is located under the first portion and is exposed from the transparent layered structure. In a plan view, the third light-emitting diode is respectively overlapped with the first light-emitting diode and the second light-emitting diode.

公开(公告)号：US20180128761A1

公开(公告)日：2018-05-10

申请号：US15804455

申请日：2017-11-06

Applicant: EPISTAR CORPORATION

Inventor： Kunal KASHYAP ,  Kun-Wei KAO ,  Yih-Hua RENN ,  Meng-Lun TSAI ,  Zong-Xi CHEN ,  Hsin-Mao LIU ,  Jui-Hung YEH ,  Hung-Chi WANG

IPC: G01N27/02 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L23/34

CPC classification number: G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.