公开(公告)号：US09825090B2

公开(公告)日：2017-11-21

申请号：US15401850

申请日：2017-01-09

Applicant: EPISTAR CORPORATION

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

公开(公告)号：US10658544B2

公开(公告)日：2020-05-19

申请号：US16382873

申请日：2019-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/20 ,  H01L33/60 ,  H01L33/30 ,  H01L33/08 ,  H01L33/62 ,  H01L33/44 ,  H01L33/00

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US09472725B2

公开(公告)日：2016-10-18

申请号：US14705453

申请日：2015-05-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/30 ,  H01L33/38 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.

Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。

公开(公告)号：US08779449B2

公开(公告)日：2014-07-15

申请号：US14065330

申请日：2013-10-28

Applicant: Epistar Corporation

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L33/48

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属 所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US09553127B2

公开(公告)日：2017-01-24

申请号：US14954708

申请日：2015-11-30

Applicant: Epistar Corporation

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L33/36

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting diode structure comprises a first epitaxial unit; a second epitaxial unit separated from the first epitaxial unit; a crossover metal layer comprising a first protruding portion entering the first epitaxial unit; a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit; a conductive connecting layer surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

Abstract translation: 发光二极管结构包括第一外延单元; 与所述第一外延单元分离的第二外延单元; 交叉金属层，包括进入第一外延单元的第一突出部分; 与所述交叉金属层分离并包括进入所述第二外延单元的第二突出部分的导电层; 围绕所述第一突出部分的导电连接层; 以及布置在导电连接层上的电极。

公开(公告)号：US09202981B2

公开(公告)日：2015-12-01

申请号：US14330914

申请日：2014-07-14

Applicant: Epistar Corporation

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L21/00 ,  H01L33/36 ,  H01L27/15 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属 所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US10304999B2

公开(公告)日：2019-05-28

申请号：US15846773

申请日：2017-12-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/60 ,  H01L33/30 ,  H01L33/46 ,  H01L33/44 ,  H01L33/00

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US10026778B2

公开(公告)日：2018-07-17

申请号：US15727276

申请日：2017-10-06

Applicant: EPISTAR CORPORATION

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.

公开(公告)号：US09876138B2

公开(公告)日：2018-01-23

申请号：US15273439

申请日：2016-09-22

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/60 ,  H01L33/30 ,  H01L33/46 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US09048379B2

公开(公告)日：2015-06-02

申请号：US14093924

申请日：2013-12-02

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/60 ,  H01L33/44

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract translation: 本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。 在该实施例中，内侧壁是倾斜表面。 发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基板; 以及连接载体衬底和半导体层序列的第一连接层。