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    Light-emitting device, manufacturing method thereof and display module using the same
    1.
    发明授权
    Light-emitting device, manufacturing method thereof and display module using the same 有权

    公开(公告)号：US12107080B2

    公开(公告)日：2024-10-01

    申请号：US18070669

    申请日：2022-11-29

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun Hsieh ,  Tzu-Hsiang Wang

    IPC: H01L29/20 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L25/0753 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32227 ,  H01L2224/83192 ,  H01L2224/83851

    Abstract: The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

    Method and structure for die bonding using energy beam
    3.
    发明授权
    Method and structure for die bonding using energy beam 有权

    公开(公告)号：US11362060B2

    公开(公告)日：2022-06-14

    申请号：US16551764

    申请日：2019-08-27

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun Hsieh ,  Shih-An Liao ,  Ying-Yang Su ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

    IPC: H01L23/00 ,  H01L25/16 ,  H01L25/075 ,  H01L23/498 ,  B23K26/22 ,  B23K101/40

    Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

    Method and structure for die bonding using energy beam
    9.
    发明授权
    Method and structure for die bonding using energy beam 有权

    公开(公告)号：US12154885B2

    公开(公告)日：2024-11-26

    申请号：US18450373

    申请日：2023-08-15

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun Hsieh ,  Shih-An Liao ,  Ying-Yang Su ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

    IPC: H01L23/00 ,  B23K26/22 ,  B23K101/40 ,  H01L23/498 ,  H01L25/075 ,  H01L25/16

    Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

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