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公开(公告)号:US20180006206A1
公开(公告)日:2018-01-04
申请号:US15702286
申请日:2017-09-12
Applicant: EPISTAR CORPORATION
Inventor: Chien-Fu HUANG , Yao-Ning CHAN , Tzu Chieh HSU , Yi-ming CHEN , Hsin-Chih CHIU , Chih-Chiang LU , Chia-liang HSU , Chun-Hsien CHANG
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.
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公开(公告)号:US20170236988A1
公开(公告)日:2017-08-17
申请号:US15484896
申请日:2017-04-11
Applicant: EPISTAR CORPORATION
Inventor: Chia-Liang HSU , Yi-ming CHEN , Hsin-Chih CHIU
CPC classification number: H01L33/62 , B65G47/24 , H01L21/67092 , H01L21/68 , H01L21/681 , H01L22/26 , H01L33/0079 , H01L33/02 , H01L33/32 , H01L33/46 , H01L33/641
Abstract: A light-emitting device comprises a semiconductor light-emitting stack comprising a first connecting layer; and a substrate under the semiconductor light-emitting stack, wherein the substrate comprises a second connecting layer connecting the first connecting layer; wherein the first connecting layer comprises a first region, a first pattern, and a first connecting surface; wherein a difference of a reflectivity between the first pattern and the first region is larger than 20%; wherein the second connecting layer comprises a second region and a side of the first pattern fully contact the second region.
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