公开(公告)号：US12074252B2

公开(公告)日：2024-08-27

申请号：US17947526

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao Wang ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/0093

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

公开(公告)号：US20210043803A1

公开(公告)日：2021-02-11

申请号：US16987994

申请日：2020-08-07

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/22 ,  H01L33/38

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

公开(公告)号：US11450787B2

公开(公告)日：2022-09-20

申请号：US16987994

申请日：2020-08-07

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao Wang ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.