公开(公告)号：US20230014825A1

公开(公告)日：2023-01-19

申请号：US17947526

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

公开(公告)号：US20240421262A1

公开(公告)日：2024-12-19

申请号：US18743847

申请日：2024-06-14

Applicant: EPISTAR CORPORATION

Inventor： Yen-Liang KUO ,  Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Chung-Hao WANG

IPC: H01L33/46

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising an upper surface; a reflective structure comprising a reflective structure opening having a first side surface and a second side surface; a connection layer covering the reflective structure; and a metal reflective layer covering the connection layer; wherein in a cross-sectional view of the light-emitting device, a first portion of a projection of the first side surface to the upper surface of the contact electrode comprises a first length, a second portion of a projection of the second side surface to the upper surface of the contact electrode comprises a second length, and the first length is smaller than the second length.

公开(公告)号：US20240421253A1

公开(公告)日：2024-12-19

申请号：US18815298

申请日：2024-08-26

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.

公开(公告)号：US20210043803A1

公开(公告)日：2021-02-11

申请号：US16987994

申请日：2020-08-07

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/22 ,  H01L33/38

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

公开(公告)号：US20250015246A1

公开(公告)日：2025-01-09

申请号：US18893462

申请日：2024-09-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

公开(公告)号：US20220302360A1

公开(公告)日：2022-09-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.