公开(公告)号：US20230010081A1

公开(公告)日：2023-01-12

申请号：US17860749

申请日：2022-07-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Jun-Yi Li ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Yi-Ming Chen ,  Chang-Hsiu Wu ,  Wen-Luh Liao ,  Chen Ou ,  Wei-Wun Jheng

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/44 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

公开(公告)号：US12125956B2

公开(公告)日：2024-10-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu Lee ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Min-Hao Yang ,  Wei-Jen Hsueh ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Chung-Hao Wang

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/387

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

公开(公告)号：US11450787B2

公开(公告)日：2022-09-20

申请号：US16987994

申请日：2020-08-07

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao Wang ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

公开(公告)号：US12074252B2

公开(公告)日：2024-08-27

申请号：US17947526

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao Wang ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/20 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/0093

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

公开(公告)号：US20210043803A1

公开(公告)日：2021-02-11

申请号：US16987994

申请日：2020-08-07

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi Wang ,  Yi-Ming Chen ,  Yi-Yang Chiu ,  Chun-Yu Lin

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/22 ,  H01L33/38

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.