公开(公告)号：US12125956B2

公开(公告)日：2024-10-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu Lee ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Min-Hao Yang ,  Wei-Jen Hsueh ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Chung-Hao Wang

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/387

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

公开(公告)号：US11894489B2

公开(公告)日：2024-02-06

申请号：US17203293

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun Hsieh ,  Yu-Tsu Lee ,  Wei-Jen Hsueh

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L33/30 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/62

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.