公开(公告)号：US20230010081A1

公开(公告)日：2023-01-12

申请号：US17860749

申请日：2022-07-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Jun-Yi Li ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Yi-Ming Chen ,  Chang-Hsiu Wu ,  Wen-Luh Liao ,  Chen Ou ,  Wei-Wun Jheng

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/44 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

公开(公告)号：US10930701B2

公开(公告)日：2021-02-23

申请号：US16390899

申请日：2019-04-22

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

公开(公告)号：US20150123152A1

公开(公告)日：2015-05-07

申请号：US14533549

申请日：2014-11-05

Applicant: EPISTAR CORPORATION

Inventor： CHI-NAN LIN ,  CHIEN-FU SHEN ,  YU-CHEN YANG ,  Ching-Tung Tseng ,  Cheng-Hsiang Ho ,  Chun-Wei Chang ,  Chen Ou

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/42 ,  H01L33/14 ,  H01L33/22

CPC classification number: H01L33/002 ,  H01L33/145 ,  H01L33/22 ,  H01L33/36 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014

Abstract: A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region.

Abstract translation: 发光元件包括包括上表面的发光层叠层，其中上表面包括第一平坦区域; 在第一平坦区域上包括电流阻挡区域的保护层; 以及在上表面上的盖区域，其中电流阻挡区域在空间上与盖区域分离; 以及覆盖电流阻挡区域的第一电极。

公开(公告)号：US10319780B2

公开(公告)日：2019-06-11

申请号：US15675351

申请日：2017-08-11

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.

公开(公告)号：US09768227B2

公开(公告)日：2017-09-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.

公开(公告)号：US20140110741A1

公开(公告)日：2014-04-24

申请号：US13654486

申请日：2012-10-18

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu

IPC: H01L33/36

CPC classification number: H01L33/36 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42

Abstract: A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.

Abstract translation: 发光装置，包括：基板; 形成在所述基板上并且包括第一部分的发光结构以及其中不发生光电转换的第二部分; 以及位于第一部分和第二部分上的第一电极。

公开(公告)号：US12125956B2

公开(公告)日：2024-10-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu Lee ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Min-Hao Yang ,  Wei-Jen Hsueh ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Chung-Hao Wang

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/387

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.