公开(公告)号：EP2533278A2

公开(公告)日：2012-12-12

申请号：EP12171116.2

申请日：2012-06-07

Applicant: FEI COMPANY

Inventor： Warschauer, Reinier ,  Young, Richard ,  Rue, Chad ,  Carleson, Peter

IPC: H01L21/66 ,  H01J37/28 ,  H01J37/304 ,  G01T7/00

CPC classification number: H01L22/12 ,  G06T7/73 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J37/3045 ,  H01J2237/31749 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing is described. Preferred embodiments of the present invention can be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan a "strip" of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically "count" the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.

公开(公告)号：EP2808885B1

公开(公告)日：2018-09-12

申请号：EP14169930.6

申请日：2014-05-27

Applicant: FEI COMPANY

Inventor： Rue, Chad ,  Chandler, Clive D.

IPC: H01J37/305 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

公开(公告)号：EP3318862B1

公开(公告)日：2019-08-21

申请号：EP16197390.4

申请日：2016-11-04

Applicant: FEI Company

Inventor： Delpy, Guillaume Pierre ,  Audoit, Guillame ,  Kwakman, Laurens ,  Rue, Chad ,  Filevich, Jorge

IPC: H01J37/305 ,  H01J37/08 ,  H01J37/147 ,  G01N1/32 ,  G01N1/06 ,  G01N1/28

公开(公告)号：EP3318862A1

公开(公告)日：2018-05-09

申请号：EP16197390.4

申请日：2016-11-04

Applicant: FEI Company

Inventor： Delpy, Guillaume Pierre ,  Audoit, Guillame ,  Kwakman, Laurens ,  Rue, Chad

IPC: G01N1/32 ,  H01J37/305 ,  G01N1/06 ,  G01N1/28

CPC classification number: G01N1/286 ,  G01N1/06 ,  G01N1/28 ,  H01J37/08 ,  H01J37/147 ,  H01J37/3056 ,  H01J2237/08 ,  H01J2237/3114 ,  H01J2237/31745

Abstract: Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values.

Abstract translation: 在Plasma-FIB上使用创新的铣削策略创建X射线断层扫描或其他层析成像扫描的样品柱。 策略在可执行的方法，系统和程序产品中提供，以执行此处的策略。 铣削策略在样品支柱周围形成不对称的凹坑，并提供单一切割无切割工艺。 各种实施例可以包括根据像素坐标调整离子剂量以及光束扫描和凹坑几何形状的优化，大大减少准备时间并显着改善总体工作流效率。 一种新颖的无切削铣削图案具有月牙形状和优化的停留时间值。

公开(公告)号：EP2808885A1

公开(公告)日：2014-12-03

申请号：EP14169930.6

申请日：2014-05-27

Applicant: FEI COMPANY

Inventor： Rue, Chad ,  Chandler, Clive D.

IPC: H01J37/305 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract translation: 要除去使用聚焦离子束系统，该方法包括限定目标区域用于半导体器件的改进的平面解处理的方法和系统，所述目标区域包括一个混合的铜和半导体器件的电介质层的至少一部分。 引向目标区域中的前体气体; 和朝向引导在所述前体气体存在的目标区域中的聚焦的离子束，从而去除第一混合铜和介电层的至少一部分和在生产研磨的目标区域中的一致平滑地面。 所述前体气体使聚焦离子束铣削的铜以基本上相同的速率作为电介质。 在优选实施方案中，前体气体包括硝基乙酸甲酯。 在可替代的实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙丙酯，乙基硝基酯，甲基methoxyacetates，或甲氧基乙酰氯。

公开(公告)号：EP3809447A1

公开(公告)日：2021-04-21

申请号：EP20201669.7

申请日：2020-10-14

Applicant: FEI Company

Inventor： Rue, Chad ,  Wang, Jing ,  Botman, Aurélien Philippe Jean Maclou ,  Christian, Joseph ,  Mani, Kenny ,  Kiss, Gabriella

IPC: H01J37/305 ,  G01N1/28 ,  G01N1/32

Abstract: Methods and apparatuses disclosed herein for large-area 3D analysis of samples using glancing incidence FIB milling. An example method at least includes milling, with a focused ion beam, a sample at a shallow angle and at a plurality of rotational orientations to remove a layer of the sample and to expose a surface, and after milling, imaging, with a charged particle beam, the exposed surface of the sample.

公开(公告)号：EP3505905A1

公开(公告)日：2019-07-03

申请号：EP18211942.0

申请日：2018-12-12

Applicant: FEI Company

Inventor： De Marco, Alex ,  Gorelick, Sergey ,  Rue, Chad ,  Christian, Joe ,  Mani, Kenny ,  Randolph, Steven ,  Langhorst, Matthias

IPC: G01N1/32 ,  H01J37/08 ,  H01J37/34

Abstract: The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O + and/or a Xe + plasma.

公开(公告)号：EP2624284A3

公开(公告)日：2014-04-16

申请号：EP13153160.0

申请日：2013-01-30

Applicant: FEI Company

Inventor： Rue, Chad

IPC: H01L21/311

CPC classification number: H01J37/3053 ,  C23C14/022 ,  C23C14/46 ,  C23F1/00 ,  C23F1/02 ,  H01J2237/3174 ,  H01L21/31138

Abstract: A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O 2, greatly increases the etch rate. In one example, polyimide material etched using a Xe + plasma FIB with a beam energy from 8 keV to 14 keV and O 2 as an etch-assisting gas, the increase in etch rate can approach 30x as compared to the default mill rate.

公开(公告)号：EP2716792A1

公开(公告)日：2014-04-09

申请号：EP12187384.8

申请日：2012-10-05

Applicant: FEI COMPANY

Inventor： Mulders, Hans ,  Randolph, Steven ,  Rue, Chad ,  Chandler, Clive

IPC: C23C16/48 ,  H01J37/317

CPC classification number: C23C16/486

Abstract: A process for deposition of high purity metal or metal oxide nano layers comprising:
directing a precursor fluid toward a substrate surface, and irradiating the substrate surface with a focused ion beam in the presence of the precursor fluid, the precursor fluid dissociating in the presence of the particle beam to deposit a metal or metal oxide on the substrate surface, characterized in that the focused ion beam comprises hydrogen or oxygen ions, and shaped nano layers of high purity metal obtainable by said process.

Abstract translation: 一种用于沉积高纯度金属或金属氧化物纳米层的方法，包括：将前体流体引向衬底表面，以及在存在前体流体的情况下用聚焦离子束照射衬底表面，所述前体流体在存在 所述粒子束在所述衬底表面上沉积金属或金属氧化物，其特征在于，所述聚焦离子束包括氢或氧离子以及通过所述方法可获得的成形纳米层的高纯度金属。

公开(公告)号：EP2624284A2

公开(公告)日：2013-08-07

申请号：EP13153160.0

申请日：2013-01-30

Applicant: FEI Company

Inventor： Rue, Chad

IPC: H01L21/311

CPC classification number: H01J37/3053 ,  C23C14/022 ,  C23C14/46 ,  C23F1/00 ,  C23F1/02 ,  H01J2237/3174 ,  H01L21/31138

Abstract: A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O 2, greatly increases the etch rate. In one example, polyimide material etched using a Xe + plasma FIB with a beam energy from 8 keV to 14 keV and O 2 as an etch-assisting gas, the increase in etch rate can approach 30x as compared to the default mill rate.

Abstract translation: 在存在蚀刻辅助气体的情况下使用低能量聚焦离子束去除碳质材料。 申请人已经发现，当FIB的束能量降低时，诸如O2的蚀刻辅助气体大大增加了蚀刻速率。 在一个实例中，使用具有8keV至14keV的束能量和O 2作为蚀刻辅助气体的Xe +等离子体FIB蚀刻的聚酰亚胺材料，与缺省磨机速率相比，蚀刻速率的增加可接近30x。