公开(公告)号：DE102007009380A1

公开(公告)日：2008-09-04

申请号：DE102007009380

申请日：2007-02-21

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： ERBERT GOETZ ,  EPPICH BERND ,  PITTROFF WOLFGANG ,  VOGEL KLAUS

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/042 ,  H01S5/062

Abstract: The diode laser stack comprises multiple laser-bar chips (1), which are arranged one above the other. The laser-bar chips have multiple emission zones, which are arranged parallel to each other. The width of the each emission zone is between 25 to 400 micrometers and the distance between the emission zones is 50 to 200 micrometers. The laser-bar chips are connected with a driver for periodic stimulation of the emission zones with a pulse-duty factor less than or equal to thirty percent. Independent claims are also included for the following: (1) a system with two or more diode laser stack (2) a method for generating laser radiation with a diode laser stack.

公开(公告)号：DE102006057718A1

公开(公告)日：2008-06-05

申请号：DE102006057718

申请日：2006-12-01

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： ERBERT GOETZ ,  FRICKE JOERG ,  PITTROFF WOLFGANG ,  WENZEL HANS

IPC: H01L23/373 ,  H01L21/58 ,  H01L23/12 ,  H01S3/042

Abstract: The component has a functional layer (2) made of semiconductor material, and a carrier substrate (1) made of a material, which has a thermal conductivity of 50 watts per meter Kelvin. A solder (3) is arranged at the carrier substrate, and protects the functional layer. A relaxation layer (4, 4a) is arranged between the functional layer and the solder and/or between the solder and the carrier substrate, where the relaxation layer has a thickness of micrometers, and is made of gold. An independent claim is also included for a method for manufacturing a semiconductor component.

公开(公告)号：DE102004059884A1

公开(公告)日：2006-06-29

申请号：DE102004059884

申请日：2004-12-10

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KURPAS PAUL ,  NEUNER MARKO ,  WUERFL JOACHIM ,  PITTROFF WOLFGANG

IPC: H01L21/58 ,  H01L23/488

Abstract: The method involves coating contact surfaces, active layer surface and heat dissipation surfaces of microchips, with gold-tin-solder in a thickness which is greater than planar difference of a gold layer of the chips. The surfaces of the microchips correspond to the contact surfaces and the active layer surface. The chips are soldered by heating of the arrangement along with the substrate. An independent claim is also included for an electronic component comprising a microchip mounted on a carrier.