公开(公告)号：WO2010106144A3

公开(公告)日：2010-11-18

申请号：PCT/EP2010053553

申请日：2010-03-18

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

Inventor： SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

IPC: H01L21/60

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The invention relates to a metallization (40) (and a semiconductor wafer (10) having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), the barrier layer (30) and the metallization (40) being applied by means of physical separation and the metallization (40) being designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.

Abstract translation: 本发明的目的，金属化（40）（或者与相应的金属化的半导体晶片（10））通过物理气相沉积（干分离）的装置和用于它们的生产提供一种方法，一方面可以制备和在另一方面的焊料的足够高的粘附性 确保-Bumps。 用于至少一个接触焊盘（20）一种制造金属化（40）的本发明方法具有以下方法步骤：在衬底（10）上施加至少一个接触焊盘（20），沉积阻挡层（30）（在所述至少一个接触垫的顶 20），以及将金属化（40）（在该阻挡层（30的顶部），其中所述阻挡层（30）和金属化（40）通过物理分离和金属化（40）为两个层结构，多个交替的金属化来施加 41，42形成），镍的第一金属化层（41），或具有小于500纳米的层厚度，并从一个角度的第二金属化层（42）由镍不同Ni合金，延展性的导电材料，优选金形成， 是。

公开(公告)号：WO2006128898A9

公开(公告)日：2008-01-31

申请号：PCT/EP2006062824

申请日：2006-06-01

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

Inventor： KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

IPC: H01L21/768

CPC classification number: H01L21/76898

Abstract: The invention relates to a method for producing vertical electrical connections (micro-vias) in semiconductor wafers for the fabrication of semiconductor components. The method is characterized by the following steps: - application of a protective resist to the wafer front side - patterning of the protective resist on the wafer front side such that the contacts to be connected to the wafer rear side become free - laser drilling of passage holes at the contact connection locations from the wafer rear side through the semiconductor substrate, the active layers and the contacts to be connected on the wafer front side - cleaning of the wafer (debris removal) - application of a plating base to the wafer rear side and into the laser-drilled passage holes - application of gold by electrodeposition onto the metallized wafer rear side and the passage holes - resist stripping of the protective resist - application of an antiwetting layer in the region of the entrance openings of the passage holes at the wafer rear side.

Abstract translation: 本发明涉及一种制造用于半导体器件的制造中的半导体晶片的垂直电接触连接（微通孔）的方法。 该方法的特征在于以下步骤： - 在晶片前表面上施加保护涂层 - 构建在晶片前侧，使得与在晶片背侧触点连接保护清漆自由 - 激光通孔在所述的接触连接点钻 晶片背面通过半导体基板侧，有源层和接触被连接在晶片前侧 - 在晶片的清洗（除去碎片） - 将电镀基座到晶片背面侧并进入激光通孔钻 - 金电镀施加到金属化 晶片背面和贯通孔 - 涂料去除保护清漆 - 的穿过晶片背面上的孔中的入口开口的区域施加一个反润湿层。

公开(公告)号：DE102008020793A1

公开(公告)日：2009-11-05

申请号：DE102008020793

申请日：2008-04-22

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： WEYERS MARKUS ,  WUERFL JOACHIM ,  BRUNNER FRANK

IPC: H01L29/04 ,  H01L21/335 ,  H01L29/20 ,  H01L29/772 ,  H01L29/861

公开(公告)号：DE10330359A1

公开(公告)日：2005-02-17

申请号：DE10330359

申请日：2003-07-01

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KIM SEON-OHK ,  WUERFL JOACHIM ,  WITTRICH HARALD

IPC: H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/331 ,  H01L29/04 ,  H01L21/265

公开(公告)号：AT457082T

公开(公告)日：2010-02-15

申请号：AT06763447

申请日：2006-06-01

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

IPC: H01L21/768

公开(公告)号：DE102005042074A1

公开(公告)日：2007-03-08

申请号：DE102005042074

申请日：2005-08-31

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KRUEGER OLAF ,  SCHOENE GERD ,  JOHN WILFRED ,  WERNICKE TIM ,  WUERFL JOACHIM

IPC: H01L21/60 ,  B23K26/40

Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.

公开(公告)号：DE102005042072A1

公开(公告)日：2006-12-14

申请号：DE102005042072

申请日：2005-08-31

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

IPC: H01L21/60 ,  H05K3/00 ,  H05K3/42

Abstract: The method involves applying a protective resist on a silicon carbide wafer (1) front side and laser boring of passage holes through the wafer and active layers at contact connection locations of the wafer-rear side. The wafer is cleaned, and a plating base is applied on the wafer-rear side and into the laser-drilled holes. Gold is galvanically applied on the wafer-rear side and the holes. An antiwetting layer (8) is applied in an area of entrance openings of the holes at the wafer-rear side, where the layer comprises titanium.

公开(公告)号：DE102004059884A1

公开(公告)日：2006-06-29

申请号：DE102004059884

申请日：2004-12-10

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： KURPAS PAUL ,  NEUNER MARKO ,  WUERFL JOACHIM ,  PITTROFF WOLFGANG

IPC: H01L21/58 ,  H01L23/488

Abstract: The method involves coating contact surfaces, active layer surface and heat dissipation surfaces of microchips, with gold-tin-solder in a thickness which is greater than planar difference of a gold layer of the chips. The surfaces of the microchips correspond to the contact surfaces and the active layer surface. The chips are soldered by heating of the arrangement along with the substrate. An independent claim is also included for an electronic component comprising a microchip mounted on a carrier.

公开(公告)号：ES2818349T3

公开(公告)日：2021-04-12

申请号：ES10714596

申请日：2010-03-18

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

IPC: H01L21/60 ,  H01L23/485

Abstract: Procedimiento para la producción de una metalización (40) para al menos una almohadilla de contacto (20) con las siguientes etapas de procedimiento: - aplicar al menos una almohadilla de contacto (20) a una oblea semiconductora (10), - aplicar una capa de barrera (30) al lado superior de la al menos una almohadilla de contacto (20), - aplicar una metalización (40) al lado superior de la capa de barrera (30), configurándose la metalización (40) como estructura de capas de dos capas de metalización de alternancia múltiple (41, 42), configurándose la primera capa de metalización (41) de níquel con un grosor de capa de menos de 100 nm y la segunda capa de metalización (42) con un espesor de capa de entre 30 nm y 50 nm; caracterizado porque la capa de barrera (30) y la metalización (40) se aplican por medio de deposición física en fase de vapor, la segunda capa de metalización (42) se configura de oro y la suma de los grosores de capa de las primeras capas de metalización (41) es de más de 1 μm.

公开(公告)号：DE102009013921B3

公开(公告)日：2010-09-30

申请号：DE102009013921

申请日：2009-03-19

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： SIDOROV VICTOR ,  ZHYTNYTSKA RIMMA ,  WUERFL JOACHIM

IPC: H01L21/283 ,  H01L21/60 ,  H01L23/482 ,  H01L23/50

Abstract: Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung einer Metallisierung für mindestens ein Kontaktpad und einen Halbleiterwafer mit Metallisierung für mindestens ein Kontaktpad. Es ist Aufgabe der vorliegenden Erfindung, eine Metallisierung (bzw. einen Halbleiterwafer mit entsprechender Metallisierung) und ein Verfahren zu deren Herstellung anzugeben, die einerseits mittels physikalischer Gasphasenabscheidung (Trockenabscheidung) herstellbar sind und andererseits eine ausreichend hohe Adhäsion eines Lot-Bumps gewährleisten. Das erfindungsgemäße Verfahren zur Herstellung einer Metallisierung (40) für mindestens ein Kontaktpad (20) weist folgende Verfahrensschritte auf: Aufbringen mindestens eines Kontaktpads (20) auf ein Substrat (10), Aufbringen einer Barriereschicht (30) auf die Oberseite des mindestens einen Kontaktpads (20), und Aufbringen einer Metallisierung (40) auf die Oberseite der Barriereschicht (30), dadurch gekennzeichnet, dass die Barriereschicht (30) und die Metallisierung (40) mittels physikalischer Abscheidung aufgebracht werden und dass die Metallisierung (40) als Schichtstruktur zweier, mehrfach alternierender Metallisierungsschichten (41, 42) ausgebildet wird, wobei die erste Metallisierungsschicht (41) aus Nickel oder einer Ni-Legierung mit einer Schichtdicke kleiner als 500 nm und die zweite Metallisierungsschicht (42) aus einem von Nickel verschiedenen, elektrisch leitfähigen Material ausgebildet wird.