公开(公告)号：KR20180041182A

公开(公告)日：2018-04-23

申请号：KR20187007445

申请日：2016-09-26

Applicant: FUJIFILM CORP

Inventor： YOSHINO FUMIHIRO ,  HARADA KENICHI ,  SUGIYAMA SHINICHI ,  TOMIGA TAKAMITSU

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/004 ,  G03F7/039 ,  G03F7/20

Abstract: 본발명은, 제조로트간에있어서의두께의편차가발생하기어려워, 그레이스케일노광에적합하게적용할수 있는패턴형성방법, 및감활성광선성또는감방사선성수지조성물을제공한다. 본발명의패턴형성방법은, 산의작용에의하여현상액에대한용해성이변화하는수지및 산발생제를포함하는감활성광선성또는감방사선성수지조성물을이용하여, 기판상에두께 T의막을형성하는공정 A와, 막을노광하는공정 B와, 노광된막을, 현상액을이용하여현상하여, 패턴을형성하는공정 C를갖는, 패턴형성방법으로서, 공정 A에있어서형성된막이, 하기조건 1 및조건 2 중적어도한쪽을충족시킨다. 조건 1: 막의두께 T가 800nm 이상인경우, γ의값이 10000 미만이다. 조건 2: 막의두께 T가 800nm 미만인경우, γ의값이 5000 미만이다.

公开(公告)号：EP2545412A4

公开(公告)日：2013-11-13

申请号：EP11753463

申请日：2011-03-04

Applicant: FUJIFILM CORP

Inventor： FUJII KANA ,  TOMIGA TAKAMITSU ,  FUJIMORI TORU

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/2041

公开(公告)号：EP2260352A4

公开(公告)日：2011-11-23

申请号：EP09727087

申请日：2009-03-31

Applicant: FUJIFILM CORP

Inventor： FUJII KANA ,  TOMIGA TAKAMITSU ,  TSUCHIHASHI TORU ,  MIZUTANI KAZUYOSHI ,  YOKOYAMA JIRO ,  SUGIYAMA SHINICHI ,  HIRANO SHUJI ,  FUJIMORI TORU

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/10 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0392 ,  C08F8/12 ,  C08F12/22 ,  C08F214/18 ,  C08F220/18 ,  C08F220/22 ,  C08F220/32 ,  C08F2220/282 ,  C08K5/375 ,  C08K5/42 ,  C08L33/068 ,  C08L51/04 ,  C08L67/02 ,  C09D125/14 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/0046 ,  C08F212/14 ,  C08F2220/1825 ,  C08F2220/185 ,  C08F220/14

Abstract: According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.

公开(公告)号：JP2014215548A

公开(公告)日：2014-11-17

申请号：JP2013094548

申请日：2013-04-26

Applicant: 富士フイルム株式会社 ,  Fujifilm Corp

Inventor： TOMIGA TAKAMITSU

IPC: G03F7/004 ,  C08F220/18 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

Abstract: 【課題】本発明は、良好な形状のパターンが形成可能なパターン形成方法を提供することを目的とする。【解決手段】(ア)下記(A)及び(B)を含有する感活性光線性又は感放射線性樹脂組成物によって膜を形成する工程、(A)酸の作用により極性が増大して有機溶剤を含む現像液に対する溶解性が減少する樹脂、(B)活性光線又は放射線の照射により酸を発生する、一般式(I)で表される化合物(イ)膜に活性光線又は放射線を照射する工程、及び(ウ)有機溶剤を含む現像液を用いて活性光線又は放射線を照射した膜を現像する工程、を有するパターン形成方法。【選択図】なし

Abstract translation: 要解决的问题：提供可以形成具有良好形状的图案的图案形成方法。解决方案：图案形成方法包括：（a）通过使用活性射线敏感或辐射敏感形成膜的步骤 包含（A）通过酸的作用使极性增加并且其对包含有机溶剂的显影剂的溶解性降低的树脂的组合物，和（B）通式（I）表示的化合物，并且在照射时产生酸 主动射线或辐射; （b）用活性射线或辐射照射薄膜的步骤; 和（c）使用含有有机溶剂的显影剂显影用活性射线或辐射照射的薄膜的步骤。

公开(公告)号：JP2012003070A

公开(公告)日：2012-01-05

申请号：JP2010138513

申请日：2010-06-17

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： FUJIMORI TORU ,  YAMADA MASAMI ,  TOMIGA TAKAMITSU

IPC: G03F7/004 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having sufficient resolution to give a perpendicular side wall when a contact hole pattern is formed, capable of maintaining a wide EDW (exposure defocus window), and having improved side lobe durability and a reduced number of blob defects.SOLUTION: An active ray-sensitive or radiation-sensitive resin composition contains (A) a resin whose solubility in an alkali developing solution is increased by an action of an acid, (B) a compound which generates an acid upon irradiation with actinic rays or radiation, and (C) a basic compound expressed by general formula (IV). In the general formula, R, R, R, Reach independently represent a hydrogen atom, an alkyl group, an alkoxy group or an aralkyl group; X represents a hydrogen atom, an alkyl group or an aryl group; and Z represents a heterocyclic group.

Abstract translation: 要解决的问题：为了提供具有足够的分辨率的光化射线敏感或辐射敏感性树脂组合物，当形成接触孔图案时能够保持宽EDW（曝光散焦窗）的垂直侧壁， 并且具有改进的旁瓣耐久性和减少的斑点缺陷数量。 解决方案：主动射线敏感或辐射敏感性树脂组合物含有（A）通过酸的作用使在碱性显影液中的溶解度增加的树脂，（B）在照射时产生酸的化合物 光化射线或辐射，和（C）由通式（IV）表示的碱性化合物。 在通式中，R 21 ，R 22 ，R 23 < R 24 各自独立地表示氢原子，烷基，烷氧基或芳烷基; X表示氢原子，烷基或芳基; Z表示杂环基。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009094504A

公开(公告)日：2009-04-30

申请号：JP2008243245

申请日：2008-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YOSHIKAWA SUSUMU ,  INABA TADASHI ,  INADA HIROSHI ,  TOMIGA TAKAMITSU

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

Abstract: PROBLEM TO BE SOLVED: To provide a polishing solution for metals, which can compatibly accelerate a polishing speed and lower dishing when polishing a body to be polished (wafer), and to provide a chemical mechanical polishing method using the polishing solution. SOLUTION: The polishing solution for metals is used for the chemical mechanical polishing in a semiconductor device manufacturing process, and contains a compound expressed by general formula: (X 1 ) n -L (in the general formula (1), wherein X 1 represents a heterocycle including at least one nitrogen atom, n represents an integer of ≥2, and L represents a bonding group of bivalent or more, and n pieces of X 1 may be respectively same or different), an oxidant, and organic acid. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于金属的抛光溶液，其可以在研磨被抛光体（晶片）时相容地加速抛光速度和降低凹陷，并提供使用该抛光溶液的化学机械抛光方法。 解决方案：用于金属的抛光溶液用于半导体器件制造过程中的化学机械抛光，并且包含由通式表示的化合物：（X 1 ） n < SB> -L（在通式（1）中，X 1 表示包含至少一个氮原子的杂环，n表示≥2的整数，L表示二价或 更多和n个X 1 可以分别相同或不同），氧化剂和有机酸。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008251939A

公开(公告)日：2008-10-16

申请号：JP2007092896

申请日：2007-03-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAMIYA SUMI ,  KATO TOMOO ,  TOMIGA TAKAMITSU

IPC: H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide polishing liquid for metal and a polishing method that have a fast CMP speed and can improve flatness of a polished surface with small dishing. SOLUTION: Disclosed are the polishing liquid for metal which is used for chemical mechanical polishing of a conductor film made of copper or copper alloy in a semiconductor device manufacturing stage, and contains (1) an amino acid derivative represented by general formula (I), (2) a water-soluble polymer having at least one substituent selected from a group of an amide radical, a hydroxy radical, a urea radical, a carboxyl radical, and a sulfo radical at a side chain, and (3) abrasive grains; and a polishing method using the polishing liquid for metal. In general formula (I), R 1 represents an alkyl radical with 1-4C, and R 2 represents an alkylene radical with 1-4C. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供具有快速CMP速度的金属抛光液和抛光方法，并且可以以小的凹陷改善抛光表面的平坦度。 解决方案：公开了用于在半导体器件制造阶段中由铜或铜合金制成的导体膜进行化学机械抛光的金属用抛光液，并且含有（1）由通式（I）表示的氨基酸衍生物 I），（2）具有至少一个选自酰基自由基，羟基，脲基，羧基和侧链上的磺基的取代基的水溶性聚合物，和（3） 磨粒; 以及使用金属研磨液的研磨方法。 在通式（I）中，R“SP”表示具有1-4C的烷基，R“SP”2表示具有1-4C的亚烷基。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008192930A

公开(公告)日：2008-08-21

申请号：JP2007027245

申请日：2007-02-06

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO TOMOO ,  TOMIGA TAKAMITSU ,  KIKUCHI MAKOTO ,  TAKAMIYA SUMI

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04

Abstract: PROBLEM TO BE SOLVED: To provide a metal polishing composition capable of suppressing dishing and faulty wirings as well as the residue of particles on the surface of a device, and to provide a chemical mechanical polishing method using the same. SOLUTION: The metal polishing composition is used for chemical mechanical polishing of a semiconductor device and contains (a) a compound expressed by a general formula A, (b) a compound expressed by a general formula B, (c) an abrasive grain, and (d) an oxidizing agent. In the general formula A, R 1 indicates an alkyl group of carbon number 1 to 3, and R 2 indicates a hydrogen atom or an alkyl group of carbon number 1 to 4. In the general formula B, R 3 , R 4 , and R 5 each indicate a hydrogen atom, an alkyl group, an amino group, a hydroxy group, and the like, independently. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制凹陷和布线错误的金属抛光组合物以及装置表面上的颗粒残留物，并提供使用该金属抛光组合物的化学机械抛光方法。 解决方案：金属抛光组合物用于半导体器件的化学机械抛光，并含有（a）由通式A表示的化合物，（b）由通式B表示的化合物，（c） 谷物，和（d）氧化剂。 在通式A中，R 1 表示碳数为1至3的烷基，R“SP”2表示氢原子或碳数1至4的烷基 在通式B中，R“SP 3”，“R”SP 4“和”R“5”表示氢原子，烷基，氨基 ，羟基等。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007251039A

公开(公告)日：2007-09-27

申请号：JP2006075300

申请日：2006-03-17

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TOMIGA TAKAMITSU

IPC: H01L21/304 ,  B24B37/00 ,  B24B37/005

Abstract: PROBLEM TO BE SOLVED: To provide a polishing method of a semiconductor device that can polish the remaining film of a conductive film and a barrier metal film continuously with a polishing fluid for the same metal for a substrate, having an insulating film, the barrier metal film, and the conductive film, has the improved flatness of a wiring section and the insulating film, and can reduce scratches. SOLUTION: In the polishing method of a body polished in a manufacturing process of a semiconductor device for polishing the barrier metal film that has a recess and is formed on one surface of the surfaces of the substrate or an interlayer insulating film, and the conductive film made of formed copper and/or a copper alloy continuously with one polishing liquid so that the surface of the barrier metal film is buried with the recess. In the polishing method, the polishing liquid contains an oxidizer (1), an amino acid having at least two carboxylic groups (2), and a particle for polishing (3). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决问题的方案为了提供一种半导体器件的抛光方法，该半导体器件可以用与具有绝缘膜的基板相同的金属的抛光液连续地抛光导电膜和阻挡金属膜的剩余膜， 阻挡金属膜和导电膜具有改善的布线部分和绝缘膜的平坦度，并且可以减少划痕。 解决方案：在用于抛光具有凹陷并形成在基板或层间绝缘膜的表面的一个表面上的阻挡金属膜的半导体器件的制造工艺中抛光的主体的抛光方法中，以及 与由一个研磨液连续地形成的铜和/或铜合金的导电膜，使得阻挡金属膜的表面与凹部一起被埋置。 在抛光方法中，抛光液含有氧化剂（1），具有至少两个羧基的氨基酸（2）和用于研磨的颗粒（3）。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012137565A

公开(公告)日：2012-07-19

申请号：JP2010288928

申请日：2010-12-24

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TOMIGA TAKAMITSU ,  FUJIMORI TORU

IPC: G03F7/039 ,  C08F212/14 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of suppressing occurrence of standing waves, having high sensitivity, having a large depth of focus (DOF) and having excellent in-plane uniformity (CDU) of a linewidth when a highly reflective substrate is directly used without using an antireflection film, and a resist film using the composition, and a pattern formation method.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) a sulfonium compound producing an acid with an acid strength pKof -2 to 3 through irradiation with actinic rays or radiation; (B) a basic compound with a basic strength pKof 5 to 10; and (C) a resin including repeating units respectively represented by general formulae (I) and (II) and having solubility in an alkali developer increased due to the action of an acid. In general formula (II), Rindicates a hydrogen atom or an alkyl group.

Abstract translation: 要解决的问题：提供能够抑制具有高灵敏度，具有大的聚焦深度（DOF）并且具有优异的面内均匀性（DOF）的驻波的发生的光化射线敏感或辐射敏感性树脂组合物 CDU），而不使用抗反射膜直接使用高反射性基板，使用该组合物的抗蚀剂膜和图案形成方法。 光敏射线敏感性或辐射敏感性树脂组合物包含：（A）产生酸强度为-2〜3的酸的锍化合物，其酸度为pK a 通过光化射线或辐射照射; （B）具有5〜10的基本强度pK b 的碱性化合物; 和（C）包含分别由通式（I）和（II）表示的重复单元并且在碱性显影剂中具有溶解性的树脂由于酸的作用而增加。 在通式（II）中，R 1 表示氢原子或烷基。 版权所有（C）2012，JPO＆INPIT