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    패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체
    1.
    发明公开
    패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체 审中-公开

    公开(公告)号：KR20180039671A

    公开(公告)日：2018-04-18

    申请号：KR20187006615

    申请日：2016-08-31

    Applicant: FUJIFILM CORP

    Inventor： NIHASHI WATARU ,  TSUBAKI HIDEAKI ,  TSUCHIHASHI TORU ,  YAMAMOTO KEI

    IPC: G03F7/26 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/42

    CPC classification number: G03F7/11 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

    Abstract: 특히극미세의잔류패턴의형성에있어서, 막감소가적어, 높은해상력을얻을수 있는패턴형성방법, 상기패턴형성방법을포함하는전자디바이스의제조방법, 및상기패턴을형성하기위한적층체를제공한다. 패턴형성방법으로서, (a) 감활성광선성또는감방사선성조성물에의하여감활성광선성또는감방사선성막을형성하는공정, (b) 감활성광선성또는감방사선성막상에상층막형성용조성물에의하여상층막을형성하는공정, (c) 상층막이형성된감활성광선성또는감방사선성막을노광하는공정, 및 (d) 노광된감활성광선성또는감방사선성막을, 현상액으로현상하는공정을포함하고, 상층막형성용조성물이, 가교제를포함한다. 전자디바이스의제조방법은, 상기패턴형성방법을포함한다. 적층체는, 감활성광선성또는감방사선성막과, 가교제를포함하는상층막을갖는다.

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    2.
    发明专利
    PATTERN FORMING METHOD AND RESIST COMPOSITION 未知

    公开(公告)号：SG183808A1

    公开(公告)日：2012-10-30

    申请号：SG2012061438

    申请日：2011-03-25

    Applicant: FUJIFILM CORP

    Inventor： KATO KEITA ,  TARUTANI SHINJI ,  TSUCHIHASHI TORU ,  KAMIMURA SOU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI

    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF-SPI •••(1)

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    3.
    发明专利
    PATTERN FORMING METHOD AND RESIST COMPOSITION 未知

    公开(公告)号：SG186712A1

    公开(公告)日：2013-02-28

    申请号：SG2012091492

    申请日：2011-02-24

    Applicant: FUJIFILM CORP

    Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  TSUCHIHASHI TORU ,  FUJII KANA

    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    6.
    发明公开
    PATTERN FORMING METHOD AND RESIST COMPOSITION 审中-公开
    STRUKTURFORMUNGSVERFAHREN UND RESISTZUSAMMENSETZUNG

    公开(公告)号：EP2550562A4

    公开(公告)日：2013-11-20

    申请号：EP11759653

    申请日：2011-03-25

    Applicant: FUJIFILM CORP

    Inventor： KATO KEITA ,  TARUTANI SHINJI ,  TSUCHIHASHI TORU ,  KAMIMURA SOU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI

    IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF−SPI  (1)

    Abstract translation: 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆DGR; SP = SPF-SPI（1）

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    8.
    发明公开
    PATTERN FORMING METHOD AND RESIST COMPOSITION 审中-公开
    STRUKTURFORMUNGSVERFAHREN UND RESISTZUSAMMENSETZUNG

    公开(公告)号：EP2539769A4

    公开(公告)日：2013-11-20

    申请号：EP11747578

    申请日：2011-02-24

    Applicant: FUJIFILM CORP

    Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  TSUCHIHASHI TORU ,  FUJII KANA

    IPC: G03F7/038 ,  C08F220/28 ,  C08F232/00 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24479

    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

    Abstract translation: 提供一种形成图案的方法，其确保极好的灵敏度，限制分辨率，粗糙度特性，曝光宽容度（EL），曝光后烘焙（PEB）温度和焦点宽容度（焦深DOF）的依赖性，以及抗蚀剂组合物 用于该方法中。 该方法包括：（A）由抗蚀剂组合物形成膜，所述抗蚀剂组合物包含含有重复单元的树脂，所述重复单元含有在被酸作用时分解从而产生醇羟基的基团，因此该树脂因此当被酸作用时降低 其在含有有机溶剂的显影液中的溶解性，（B）将该膜曝光，以及（C）使用含有有机溶剂的显影液使曝光的显影液显影。

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