PATTERN FORMING METHOD AND RESIST COMPOSITION

    公开(公告)号:SG186712A1

    公开(公告)日:2013-02-28

    申请号:SG2012091492

    申请日:2011-02-24

    Applicant: FUJIFILM CORP

    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN

    公开(公告)号:SG190734A1

    公开(公告)日:2013-07-31

    申请号:SG2013041884

    申请日:2011-11-29

    Applicant: FUJIFILM CORP

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    PATTERN FORMING METHOD AND RESIST COMPOSITION

    公开(公告)号:SG183808A1

    公开(公告)日:2012-10-30

    申请号:SG2012061438

    申请日:2011-03-25

    Applicant: FUJIFILM CORP

    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF-SPI •••(1)

    PATTERN FORMING METHOD AND RESIST COMPOSITION
    7.
    发明公开
    PATTERN FORMING METHOD AND RESIST COMPOSITION 审中-公开
    STRUKTURFORMUNGSVERFAHREN UND RESISTZUSAMMENSETZUNG

    公开(公告)号:EP2539769A4

    公开(公告)日:2013-11-20

    申请号:EP11747578

    申请日:2011-02-24

    Applicant: FUJIFILM CORP

    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

    Abstract translation: 提供一种形成图案的方法,其确保极好的灵敏度,限制分辨率,粗糙度特性,曝光宽容度(EL),曝光后烘焙(PEB)温度和焦点宽容度(焦深DOF)的依赖性,以及抗蚀剂组合物 用于该方法中。 该方法包括:(A)由抗蚀剂组合物形成膜,所述抗蚀剂组合物包含含有重复单元的树脂,所述重复单元含有在被酸作用时分解从而产生醇羟基的基团,因此该树脂因此当被酸作用时降低 其在含有有机溶剂的显影液中的溶解性,(B)将该膜曝光,以及(C)使用含有有机溶剂的显影液使曝光的显影液显影。

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