公开(公告)号：CA2571993A1

公开(公告)日：2007-06-22

申请号：CA2571993

申请日：2006-12-21

Applicant: GEN ELECTRIC

Inventor： RUCKER MICHAEL HOWARD ,  WEAVER SCOTT ANDREW ,  SAYLOR MATTHEW DAVID ,  LEWIS DANIEL JOSEPH ,  LOU VICTOR LIENKONG ,  DALAKOS GEORGE THEODORE

IPC: C23C16/54 ,  C23C16/00 ,  H01L21/203

Abstract: A chemical vapor deposition apparatus (10) comprises a heating element (12) capable of emitting electromagnetic radiation; a retort (16) positioned relative to the heating element (12) to receive the electromagnetic radiation; an encasing member (1 8) at least partially disposed around the retort (16), the encasing member (18) comprising a material that is at least partially transparent to the electromagnetic radiation; a plenum (20) defined at least in part by an inner surface (24) of the encasing membe r (18) and an outer surface (22) of the retort (16) ; and a furnace box (14) at least partially disposed around the encasing member (18) and the retort (16), and housing th e heating element (12).

公开(公告)号：CA3018857A1

公开(公告)日：2019-04-06

申请号：CA3018857

申请日：2018-09-27

Applicant: GEN ELECTRIC

Inventor： LIANG YONG ,  ERIKSSON TOMAS ,  NECULAES VASILE ,  DALAKOS GEORGE THEODORE

IPC: H05H7/00 ,  H05H13/00

Abstract: System includes a particle accelerator configured to direct a particle beam of charged particles along a designated path. The system also includes an extraction device positioned downstream from the particle accelerator. The extraction device includes a stripper foil and a foil holder that holds the stripper foil. The foil holder is configured to position the stripper foil across the designated path of the particle beam such that the particle beam is incident thereon. The stripper foil is configured to remove electrons from the charged particles, wherein the stripper foil includes a backing layer and a conductive layer stacked with respect to one another. The backing layer includes synthetic diamond.

公开(公告)号：DE102011056639A1

公开(公告)日：2012-06-28

申请号：DE102011056639

申请日：2011-12-19

Applicant: GEN ELECTRIC

Inventor： BLAYDES HOLLY ANN ,  VERNOOY DAVID WILLIAM ,  ROJO JUAN CARLOS ,  DALAKOS GEORGE THEODORE ,  NORTHRUP ALLAN ROBERT ,  MESCHTER PETER JOEL ,  PENG HONGYING ,  XI YANGANG ANDREW ,  ZHANG ANPING ,  CAO HONGBO ,  GOSSMAN ROBERT DWAYNE

IPC: H01L31/18 ,  C23C14/08 ,  H01L21/283

Abstract: In einem Aspekt der Erfindung wird ein Verfahren bereitgestellt. Das Verfahren schließt das Anordnen einer im Wesentlichen amorphen Cadmiumzinnoxid-Schicht auf einem Träger und das thermische Behandeln der im Wesentlichen amorphen Cadmiumzinnoxid-Schicht in einer Atmosphäre ein, die im Wesentlichen frei von Cadmium aus einer externen Quelle ist, um eine transparente Schicht zu bilden, wobei die transparente Schicht einen elektrischen Widerstand von weniger als 2 × 10–4 Ohm-cm aufweist. Es wird auch ein Verfahren zum Herstellen einer photovoltaischen Vorrichtung angegeben.

公开(公告)号：SG153849A1

公开(公告)日：2009-07-29

申请号：SG2009042854

申请日：2006-12-22

Applicant: GEN ELECTRIC

Inventor： LEWIS DANIEL JOSEPH ,  LOU VICTOR LIENKONG ,  DALAKOS GEORGE THEODORE ,  SAYLOR MATTHEW DAVID ,  WEAVER SCOTT ANDREW ,  RUCKER MICHAEL HOWARD

Abstract: A chemical vapor deposition apparatus (10) comprises a heating element (12) capable of emitting electromagnetic radiation; a retort (16) positioned relative to the heating element (12) to receive the electromagnetic radiation; an encasing member (18) at least partially disposed around the retort (16), the encasing member (18) comprising a material that is at least partially transparent to the electromagnetic radiation; a plenum (20) defined at least in part by an inner surface (24) of the encasing member (18) and an outer surface (22) of the retort (16) ; and a furnace box (14) at least partially disposed around the encasing member (18) and the retort (16), and housing the heating element (12).

公开(公告)号：SG133575A1

公开(公告)日：2007-07-30

申请号：SG2006089932

申请日：2006-12-22

Applicant: GEN ELECTRIC

Inventor： LEWIS DANIEL JOSEPH ,  LOU VICTOR LIENKONG ,  DALAKOS GEORGE THEODORE ,  SAYLOR MATTHEW DAVID ,  WEAVER SCOTT ANDREW ,  RUCKER MICHAEL HOWARD

Abstract: A chemical vapor deposition apparatus (10) comprises a heating element (12) capable of emitting electromagnetic radiation; a retort (16) positioned relative to the heating element (12) to receive the electromagnetic radiation; an encasing member (18) at least partially disposed around the retort (16), the encasing member (18) comprising a material that is at least partially transparent to the electromagnetic radiation; a plenum (20) defined at least in part by an inner surface (24) of the encasing member (18) and an outer surface (22) of the retort (16) ; and a furnace box (14) at least partially disposed around the encasing member (18) and the retort (16), and housing the heating element (12).

公开(公告)号：MY166589A

公开(公告)日：2018-07-17

申请号：MYPI2014001824

申请日：2012-12-14

Applicant: GEN ELECTRIC

Inventor： CAO JINBO ,  ROJO JUAN CARLOS ,  DALAKOS GEORGE THEODORE ,  YAKIMOV AHARON ,  ZHONG DALONG ,  KOREVAAR BASTIAAN ARIE ,  FELDMAN-PEABODY SCOOT D

IPC: H01L31/0296 ,  H01L21/477 ,  H01L31/0392 ,  H01L31/18

Abstract: A METHOD OF MANUFACTURING SEMICONDUCTOR ASSEMBLIES IS PROVIDED. THE MANUFACTURING METHOD INCLUDES THERMALLY PROCESSING A FIRST SEMICONDUCTOR ASSEMBLY (100) COMPRISING A FIRST SEMICONDUCTOR LAYER (110) DISPOSED ON A FIRST SUPPORT (120) AND THERMALLY PROCESSING A SECOND SEMICONDUCTOR ASSEMBLY (200) COMPRISING A SECOND SEMICONDUCTOR LAYER (210) DISPOSED ON A SECOND SUPPORT (220). THE FIRST AND SECOND SEMICONDUCTOR ASSEMBLIES (100, 200) ARE THERMALLY PROCESSED SIMULTANEOUSLY, AND THE FIRST AND SECOND SEMICONDUCTOR ASSEMBLIES (100, 200) ARE ARRANGED SUCH THAT THE FIRST SEMICONDUCTOR LAYER (110) FACES THE SECOND SEMICONDUCTOR LAYER (210) DURING THE THERMAL PROCESSING. THE MOST SUITABLE DRAWING:

公开(公告)号：DE102016106199A1

公开(公告)日：2016-10-13

申请号：DE102016106199

申请日：2016-04-05

Applicant: GEN ELECTRIC

Inventor： DALAKOS GEORGE THEODORE ,  FRONTERA MARK ALAN ,  ROBINSON VANCE SCOTT

IPC: H01J35/10

Abstract: In einer Ausführungsform ist ein Röntgenquellentarget geschaffen, das zwei oder mehrere Schichten eines röntgenerzeugenden Materials in unterschiedlichen Tiefen innerhalb eines Quellentargets für einen Elektronenstrahl enthält. In einer derartigen Ausführungsform erstreckt sich das röntgenerzeugenden Material in jeder Schicht nicht vollständig über eine darunter liegende Substratoberfläche.

公开(公告)号：DE102016106198A1

公开(公告)日：2016-10-13

申请号：DE102016106198

申请日：2016-04-05

Applicant: GEN ELECTRIC

Inventor： DALAKOS GEORGE THEODORE ,  FRONTERA MARK ALAN ,  ROBINSON VANCE SCOTT ,  ROSS WILLIAM ROBERT ,  XI ZHANG

IPC: H01J35/10

Abstract: In verschiedenen Ausführungsformen ist ein mehrschichtiges Röntgenquellentarget geschaffen, das zwei oder mehrere Schichten eines Targetmaterials in unterschiedlichen Tiefen und mit unterschiedlichen Dicken aufweist. In einer derartigen Ausführungsform nimmt die Dicke der röntgenerzeugenden Schichten im Verhältnis zu ihrer Tiefe in Bezug auf die dem Elektronenstrahl zugewandte Oberfläche des Quellentargets zu, so dass die röntgenerzeugenden Schichten, die sich von dieser Oberfläche weiter entfernt befinden, dicker sind als röntgenerzeugende Schichten, die sich näher an der dem Elektronenstrahl zugewandten Oberfläche befinden.

公开(公告)号：SE537990C2

公开(公告)日：2016-01-19

申请号：SE1151169

申请日：2011-12-07

Applicant: GEN ELECTRIC

Inventor： BLAYDES HOLLY ANN ,  DALAKOS GEORGE THEODORE ,  VERNOOY DAVID WILLIAM ,  NORTHRUP ALLAN ROBERT ,  ROJO JUAN CARLOS ,  MESCHTER PETER JOEL ,  PENG HONGYING ,  CAO HONGBO ,  XI YANGANG ANDREW ,  GOSSMAN ROBERT DWAYNE ,  ZHANG ANPING

IPC: C23C14/58 ,  C23C14/06 ,  H01L31/18

公开(公告)号：MY151237A

公开(公告)日：2014-04-30

申请号：MYPI2011005939

申请日：2011-12-07

Applicant: GEN ELECTRIC

Inventor： BLAYDES HOLLY ANN ,  GOSSMAN ROBERT DWAYNE ,  ZHANG ANPING ,  DALAKOS GEORGE THEODORE ,  VERNOOY DAVID WILLIAM ,  NORTHRUP ALLAN ROBERT ,  RAJO JUAN CARLOS ,  MESCHTER PETER JOEL ,  PENG HONGYING ,  CAO HONGBO ,  XI YANGANG ANDREW

IPC: H01L31/0224

Abstract: IN ONE ASPECT OF THE PRESENT INVENTION A METHOD IS PROVIDED. THE METHOD INCLUDES DISPOSING A SUBSTANTIALLY AMORPHOUS CADMIUM TIN OXIDE LAYER ON A SUPPORT; AND THERMALLY PROCESSING THE SUBSTANTIALLY AMORPHOUS CADMIUM TIN OXIDE LAYER IN AN ATMOSPHERE SUBSTANTIALLY FREE OF CADMIUM FROM AN EXTERNAL SOURCE TO FORM A TRANSPARENT LAYER, WHEREIN THE TRANSPARENT LAYER HAS AN ELECTRICAL RESISTIVITY LESS THAN ABOUT 2X10¯?OHM-CM. METHOD OF MAKING A PHOTOVOLTAIC DEVICE IS ALSO PROVIDED. (FIGURE 2)